Allicdata Part #: | 1560-1200-5-ND |
Manufacturer Part#: |
GP2M005A060FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 4.2A TO220F |
More Detail: | N-Channel 600V 4.2A (Tc) 32.8W (Tc) Through Hole T... |
DataSheet: | GP2M005A060FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 658pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The GP2M005A060FG is a MOSFET device that’s built using an advanced TrenchMOS™ technology. It features an on-resistance of 0.22Ω, a peripheral gate charge of 2.6nC, and an operating current of 3.2A. The GP2M005A060FG is a single MOSFET device, and its application fields include an array of power supply and other power applications, automotive electronics, and a range of household appliances. The device has a rated voltage of 60V, and a drain-source breakdown voltage of 60V. In addition, it has a body diode breakdown voltage of 54V, and a junction-to-ambient thermal resistance of 58.9°C/W.
The device features an input capacitance of 4.3nF, a maximum drain-source saturation voltage of 19mV, and an output capacitance of 4.4nF. It also has a gate-source threshold voltage of 0.42V and a device capacitance of 3.1nF. The GP2M005A060FG is designed to provide maximum efficiency and performance. Its operating temperature ranges from -55°C to +150°C. The maximum drain current is rated at 15A while the maximum junction temperature is rated at +175°C.
The GP2M005A060FG MOSFET is a voltage-controlled device. It carries out a four-layer process, which consists of a source terminal, a drain terminal, a body terminal, and a gate terminal. The gate and drain electrodes are isolated from the substrate by a thin gate oxide layer. The device works by applying a voltage to the gate terminal and creating an inversion region between the source and drain terminals, which is also known as a depletion region. When the threshold voltage is applied, current can flow from the source to drain. Since the resistance between the source and drain terminals is relatively low, the drain current is controlled by a gate terminal.
The GP2M005A060FG is a power device that can be used in a range of applications. In a buck converter, for example, this device can be used as a high-side switch to control the output voltage. As an application in motor control, it can also be used to control the speed of a motor. Additionally, it can be used to design a power supply system, or to design an amplifier.
As can be seen, the GP2M005A060FG is a beneficial MOSFET device that is designed with the latest technology and provides maximum efficiency and performance. With its variety of application fields and its working principle, the GP2M005A060FG is an ideal choice for a wide range of uses.
The specific data is subject to PDF, and the above content is for reference
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