Allicdata Part #: | GP2M002A065PG-ND |
Manufacturer Part#: |
GP2M002A065PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 650V 1.8A IPAK |
More Detail: | N-Channel 650V 1.8A (Tc) 52W (Tc) Through Hole I-P... |
DataSheet: | GP2M002A065PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 353pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M002A065PG is a unique type of MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor. It is categorized as a single-gate type. Usually, it is used as a switch or amplifier in efficient power management systems.
A MOSFET is a four terminal device consisting of source, gate, drain and body connections. GP2M002A065PG is a field effect transistor with a small footprint, high frequency switching capability and low on-resistance. Its low voltage operation makes it suitable for use in battery-based systems. This device has an on-resistance as low as 0.065 ohms, allowing it to operate efficiently in low power applications. The device has a P-type substrate and a drain-source voltage of 45V.
GP2M002A065PG is specially designed for efficient power management in electronic systems. It is used in power switches, level shifters, DC-DC converters, et cetera. It is also used as an amplifier in audio switch circuits, modem switch circuits, base station switch circuits and LED switch circuits. Additionally, it can also be used in digital logic circuits as a switch and in high frequency applications like RF (Radio Frequency) transceiver switches. The device can be utilized in various commercial, industrial and automotive fields.
In terms of its working principle, GP2M002A065PG functions as a switch or amplifier, controlling the output current and voltage in a power management system. When a zero voltage is applied to the gate, the device will act as an open switch, with the fully turned off state referred to as the "off state". When a higher voltage is applied to the gate, the device will act as a closed switch, allowing the drain to source flow of current. This is known as the "on state". When the voltage is further increased, the device will enter the saturation region, where the device has both a low on-resistance and an ideal input / output relationship.
Depending on the desired output, the gate voltage can be controlled to adjust the current flow through the device and therefore the output of the system. The current flowing through the device can be determined by multiplying the voltage reading at the device’s drain with the on-resistance of the device. The most significant application of GP2M002A065PG is in low power management systems, where this device’s low on-resistance allows for efficient current flow.
The GP2M002A065PG is a versatile, low power MOSFET with a wide range of applications. Its low voltage operation and low on-resistance make it ideal for use in power management systems, where it operates as both a switch and an amplifier. With its high frequency switching capabilities and small physical size, the GP2M002A065PG is a great choice for numerous commercial, industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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