GP2M008A060FGH

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	39W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1063pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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GP2M008A060FGH Application Field and Working Principle

GP2M008A060FGH is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) that belongs to a category of transistors known as field-effect transistors (FETs). A FET is composed of several crystalline semiconductor regions. By controlling the electrical connections to these regions, the electrical charge that flows through an isolated channel of semiconductor material can be turned on and off. The GP2M008A060FGH is a single MOSFET, meaning it has one gate (G) to control the flow of current between the drain (D) and the source (S) of the FET. The GP2M008A060FGH is a common-source amplifier, and its ability to efficiently amplify small signals makes it ideal for numerous electrical and electronic applications. It is most commonly used in amplifier circuits and other linear amplifying circuits, where its low input impedance, wide frequency range, and high-gain make it an ideal choice. It can also be used in switching and frequency-control circuits, such as those in televisions and digital clocks, where its low power consumption and high switching speed provide excellent efficiency.The GP2M008A060FGH’s working principle is based on the physical concept of capacitance, which is the ability of an electrical circuit to store energy. In the case of the GP2M008A060FGH, an electrical charge is stored in the isolated gate of the FET, which is then used to control the flow of current between the drain and the source. When a small voltage is applied to the gate of the FET, it activates the gate’s capacitance, not only allowing a small current to flow through the isolated channel, but also amplifying it to a much larger voltage. The physical process of amplification is known as transconductance, and the resulting current, known as the drain current, is controlled by the applied gate voltage.The GP2M008A060FGH is designed for use in a variety of industrial and consumer electronics applications, including data and signal processing, consumer audio/video equipment, and embedded systems. Its low input impedance, wide frequency range, and high-gain also make it ideal for use in professional audio equipment, such as amplifiers and mixers. Furthermore, its low power consumption and high switching speed make it an ideal choice for use in power regulation and control equipment, such as electrical motors and the circuits used in industrial manufacturing processes.As is the case with most MOSFETs, the GP2M008A060FGH is composed of several layers of semiconductor material, and each layer is separated by a thin insulating layer of oxide. The MOSFET works by controlling the flow of electrical current through these layers. A positive or negative charge is applied to the gate of the FET, which in turn allows a certain amount of current to flow between the drain and the source. By controlling the charge applied to the gate, the voltage applied to the drain, and the resistance of the channel, the amount of current that is allowed to flow through the FET can be precisely controlled.Overall, the GP2M008A060FGH is a versatile and highly efficient single MOSFET, which is ideal for use in a variety of applications. Its ability to efficiently amplify small signals and its low power consumption and high switching speed make it an ideal choice for use in amplifier circuits, switching and frequency-control circuits, professional audio equipment, and power regulation and control equipment.

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