Allicdata Part #: | GP2M012A060H-ND |
Manufacturer Part#: |
GP2M012A060H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 12A TO220 |
More Detail: | N-Channel 600V 12A (Tc) 231W (Tc) Through Hole TO-... |
DataSheet: | GP2M012A060H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 231W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1890pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
GP2M012A060H is an N-channel MOSFET based on Trench MOSFET technology with super-braking characteristics. It is one of small-signal MOSFETs for the purpose of switching and controlling in typical electronic equipment and electronic circuits.
This device has an very low on-state resistance, so that it is important for high frequencies applications such as wireless communication systems. Also, it brings high efficiency and a low switching time because of its fast switching speed. In addition, this device is also suitable for high-current applications with a maximum drain current of 6 A.
GP2M012A060H has a gate-source voltage of 12 V and a VGS(th) of 2 V and is applied with a power dissipation of 60 W. It is available in a SSOP-8 package and provides an on-state resistance (RDS(on)) of 0.072 Ω at the typically declared Operating temperature range of -55 to +150 °C. The device exhibits exceptional ruggedness, providing improved gate charge handling capability and enabling the device to withstand higher ESD voltages. The device includes a body diode and exhibits maximum ratings of source/drain voltage of 30V and drain-component current of 6A.
The working principle of GP2M012A060H is based on the operation of MOSFETs. It consists of two semiconductor layers and a gate in between the two layers. The conductivity between the two layers can be controlled by the voltage applied on the gate. When the voltage applied on the gate is more than a certain threshold value known as the threshold voltage, the charge carriers start to accumulate in the channel region between the two layers resulting in an inversion layer and a conducting path is formed between the source and the drain. This is known as the inversion mode and the MOSFET works as a switch.
GP2M012A060H has major applications in medical electronics, power supply systems, audio centers, alarm systems, mixing consoles, automobiles, robots, etc.It can also be used as an amplifier to control the amplitude of a signal by changing its resistance. It also finds use in receivers, transmitters, modulation circuits and detectors. Owing to its broad range of applications, GP2M012A060H has gained a high demand in the marketplace.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GP2M002A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
GP2M002A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A TO220... |
GP2M002A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2AN-Chan... |
GP2M002A065CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A DPA... |
GP2M002A065FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO2... |
GP2M002A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO2... |
GP2M002A065PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A IPA... |
GP2M004A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A DPAKN... |
GP2M004A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO220... |
GP2M004A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO220... |
GP2M004A065CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A DPAKN... |
GP2M004A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A TO220... |
GP2M005A050FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP2M005A050HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP2M005A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A IPA... |
GP2M007A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 6.5A TO2... |
GP2M008A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A DPA... |
GP2M008A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A IPA... |
GP2M009A090FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 9A TO220... |
GP2M009A090NG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 9A TO3PN... |
GP2M010A060H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO22... |
GP2M012A060H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 12A TO22... |
GP2M020A050F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO22... |
GP2M020A050N | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 20A TO3P... |
GP2M023A050N | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 23A TO3P... |
GP2M002A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A TO220... |
GP2M004A065FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A TO220... |
GP2M004A065PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A IPAKN... |
GP2M005A050CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
GP2M005A050PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A IPA... |
GP2M005A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A DPA... |
GP2M005A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A TO2... |
GP2M005A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A TO2... |
GP2M005A060PGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A IPA... |
GP2M007A080F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 800V 7A TO220... |
GP2M008A060FGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060PGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A IPA... |
GP2M010A065F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 9.5A TO2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...