Allicdata Part #: | GP2M009A090FG-ND |
Manufacturer Part#: |
GP2M009A090FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 900V 9A TO220F |
More Detail: | N-Channel 900V 9A (Tc) 89W (Tc) Through Hole TO-22... |
DataSheet: | GP2M009A090FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2740pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M009A090FG is a type of metal oxide semiconductor field effect transistor (MOSFET) which is specifically designed to be used in high-power applications. It can be used in a variety of applications, including switching and voltage-controlling circuits.
MOSFETs, also known as insulated gate field effect transistors, are a type of digital logic device. They are often referred to as "transistors" and are used for switching and voltage controlling circuits. MOSFETs have become one of the most popular transistors used in electronic applications due to their low resistance, high-switching speed, and low cost.
While GP2M009A090FG is designed for a variety of applications, its primary purpose is to be used in high power applications. The device is designed with a high-current rating designed to support high-level voltage and current demands. In addition, the device features an integrated root-level power control circuit that helps to reduce switching losses. The device also features a built-in protection circuit which allows it to be used in a variety of industrial and automotive applications.
To understand the working principle of GP2M009A090FG, we need to understand how a MOSFET works in general. A MOSFET consists of a source, a drain, and a gate connected with a metal oxide layer. When the voltage applied to the gate is higher than the source voltage, an electrical current passes through the device. This is referred to as \'enhancement-mode\' operation. Conversely, if the voltage applied to the gate is less than the source voltage, the current will not pass through the device. This is referred to as \'depletion mode\' operation.
When GP2M009A090FG is used as a switch, it is operated in an enhancement-mode. The voltage applied to the gate determines the amount of current flowing through the device. If the voltage is increased to a critical point, the current starts to pass through the device and the switch is turned on. Conversely, if the voltage is decreased, the current stops flowing through the device and the switch is turned off.
To control the voltage applied to the device, a variable current source is usually connected to the gate. This variable current source is usually connected to a signal source and the signal is used to provide the control voltage. When the signal is increased, the voltage at the gate is increased, which causes the current to start flowing through the device. Conversely, when the signal is decreased, the voltage applied to the gate is decreased, causing the current to stop flowing.
GP2M009A090FG is primarily used in high-power applications where high switching speed and low power loss is required. It is also used in automotive and industrial applications due to its built-in protection circuit. The device provides fast switching, superior performance, and reliable operation, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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