GP2M002A060CG Allicdata Electronics
Allicdata Part #:

GP2M002A060CG-ND

Manufacturer Part#:

GP2M002A060CG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 600V 2A DPAK
More Detail: N-Channel 600V 2A (Tc) 52.1W (Tc) Surface Mount D-...
DataSheet: GP2M002A060CG datasheetGP2M002A060CG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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GP2M002A060CG is a type of single MOSFET transistor, which is usually used in analog and digital electronic circuits in order to control the current flow. It is a field effect transistor that is robust and low cost. MOSFET transistors are usually used where a high speed, constant current or voltage is required. The GP2M002A060CG is a surface mount device with its source connected to the drain when no voltage is present. It is controlled by a gate voltage and is an enhancement mode MOSFET transistor. Its gate to source breakdown voltage rating is above 60 volts and its maximum drain current is 0.6A. It is an N-channel device with an on-state drain-source resistance of 30mΩ. Its maximum power dissipation is 0.12W with a junction temperature of 125 degree Celsius. The working principle of a GP2M002A060CG transistor is based on the principle of electron flow. Electrons move through the transistor channel in the same direction as the voltage applied to the gate. This creates an electric field in the channel that causes the electrons to move toward the drain end. The electric field created by the voltage applied to the gate controls the amount of current flowing through the transistor. In an application field, the GP2M002A060CG MOSFET is typically used in high speed switching and circuit applications. It is also used in 12V DC control circuits, in audio amplifiers, in voltage regulators, and in other analog and digital circuits. It is also used in battery powered equipment, in solar cell controllers, in dimmer switches, and in battery charging circuits. Overall, the GP2M002A060CG is a small and very reliable MOSFET transistor. It is a popular choice for a wide range of low power applications where a small package and fast switching are needed. It offers a reasonable price point and its current handling capabilities make it suitable for many applications. This MOSFET transistor is also very robust and provides high levels of current and voltage regulation, making it an excellent choice for many applications.

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