Allicdata Part #: | GP2M002A060PG-ND |
Manufacturer Part#: |
GP2M002A060PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 2A |
More Detail: | N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole I-P... |
DataSheet: | GP2M002A060PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
GP2M002A060PG is an ultra-low on-resistance (RDS(on)) and low-height, configurable logic IC designed to offer high speed switching performance in a wide variety of applications. This IC is best suited for applications that require highly efficient and reliable operation. GP2M002A060PG was developed by GP2 (Global Power Technology Solutions) and is available as a leaded or leadless surface mount device.GP2M002A060PG is a configurable logic IC and is also referred to as an “enhanced FET” (EFET). It is able to effectively replace multiple FETs and provides improved power management, lower power consumption, reduced size and weight, and increased system reliability. EFETs are a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which are mostly used as switches.The GP2M002A060PG has a turn-on voltage of only 0.6V and an on-resistance (RDS(on)) of 0.5Ω, enabling high speed switching performance. The GP2M002A060PG offers an enhanced ESD (electrostatic discharge) protection with a built-in ESD protection circuit. This device also has logic level shift measures, resulting in a reduced switching time. Furthermore, its low voltage operation makes it suitable for applications that require high speed low power consumption.The GP2M002A060PG features a unique, compact, two-lead package which makes it suitable for a wide range of applications. It is primarily used in motor control, solar power solutions, LED lighting solutions, DC/DC converters, inverters, and other power management designs. Its compact size also makes it ideal for consumer electronics, automotive electronics, and industrial applications.Compared to other devices, the GP2M002A060PG has some major advantages. Due to its small size and high speed switching capabilities, this device is capable of improved power management and system optimization. Additionally, its low on-resistance (RDS(on)) reduces energy consumption, allowing engineers to achieve improved energy efficiency in their designs.The working principle of GP2M002A060PG is based on the field effect transistor (FET). A FET is a type of transistor. It is a three-terminal device which consists of a source, a drain, and a gate. The gate is used to control the flow of electrons in the device. When a voltage is applied to the gate relative to the source and drain, a channel is created in the substrate. This channel allows current to flow through the device and control the state of the device.In GP2M002A060PG, the gate can be programmed to open or close using a logic level input. When the gate is open, current can flow through the device and the device is on. When the gate is closed, current cannot flow through the device and the device is off. GP2M002A060PG is able to provide a low turn-on voltage of 0.6V, enabling high-speed switching performance.In summary, GP2M002A060PG is a configurable logic IC which is used in a wide range of applications such as motor control, solar power solutions, LED lighting solutions, DC/DC converters, inverters, and other power management designs. It is based on the field effect transistor (FET) and is able to offer improved energy efficiency and power management due to its low on-resistance (RDS(on)) and high-speed switching performance.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "GP2M" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
GP2M002A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
GP2M002A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A TO220... |
GP2M002A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2AN-Chan... |
GP2M002A065CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A DPA... |
GP2M002A065FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO2... |
GP2M002A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO2... |
GP2M002A065PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A IPA... |
GP2M004A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A DPAKN... |
GP2M004A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO220... |
GP2M004A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO220... |
GP2M004A065CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A DPAKN... |
GP2M004A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A TO220... |
GP2M005A050FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP2M005A050HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A TO2... |
GP2M005A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A IPA... |
GP2M007A065HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 6.5A TO2... |
GP2M008A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A DPA... |
GP2M008A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A IPA... |
GP2M009A090FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 9A TO220... |
GP2M009A090NG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 900V 9A TO3PN... |
GP2M010A060H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO22... |
GP2M012A060H | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 12A TO22... |
GP2M020A050F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO22... |
GP2M020A050N | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 20A TO3P... |
GP2M023A050N | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 23A TO3P... |
GP2M002A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A TO220... |
GP2M004A065FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A TO220... |
GP2M004A065PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 4A IPAKN... |
GP2M005A050CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
GP2M005A050PG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A IPA... |
GP2M005A060CG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A DPA... |
GP2M005A060FG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A TO2... |
GP2M005A060HG | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A TO2... |
GP2M005A060PGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.2A IPA... |
GP2M007A080F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 800V 7A TO220... |
GP2M008A060FGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A TO2... |
GP2M008A060PGH | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.5A IPA... |
GP2M010A065F | Global Power... | 0.0 $ | 1000 | MOSFET N-CH 650V 9.5A TO2... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...
IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...
IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...