GP2M005A060HG

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GP2M005A060HG is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed and manufactured by Freescale Semiconductor. This MOSFET is a 60V logic level N-channel MOSFET and comes in a SOT-23 package.It’s primarily used in a variety of low- and medium-power electronic applications where reliable switching is desired.

MOSFETs are generally three-terminal devices. They have a source (S), drain (D) and gate (G) terminal. When a bias voltage is applied between the gate and source terminal (VoGs), it creates an electric field which then modulates the conductivity between source and drain.

The GP2M005A060HG is an N-Channel MOSFET which means electrons flow from the drain to the source. When the gate terminal is negative relative to the source terminal, the MOSFET becomes “OFF”. When it is positive relative to the source, it becomes “ON”. The logic level of this MOSFET is 60V, meaning it requires a gate-source voltage of at least 60V to turn “ON”. This MOSFET has a maximum drain current of 4A and a maximum power dissipation of 6W.

The GP2M005A060HG is well-suited for switching applications that require high efficiency and minimal power loss. Some of the common applications for this MOSFETs include audio amplifiers, motor control circuits, power management switches and various gate drive circuits. Its high frequency switching capability makes it ideal for applications involving high-frequency signals and noise.

In summary, the GP2M005A060HG is a logic level N-Channel MOSFET designed to handle high-frequency switching applications with high efficiency and minimal power loss. It is well suited for a variety of audio and motor control circuits, gate drive circuits and power management switches.

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