GP2M008A060CG

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1063pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The GP2M008A060CG is a single N-Channel MOSFET with a maximum drain current of 60A and maximum drain voltage of 100V. It is designed for use as a general purpose power switch in applications such as DC/DC converters and power supplies. It features excellent high speed switching characteristics and low RDS(ON) values, making it an ideal power switch for high power applications.

Application Field

The GP2M008A060CG is a power MOSFET designed for use in high power DC/DC converters and power supplies. It is ideal for use in applications that require high speed switching of large currents with low resistance. It can be used as a switching regulator for high power DC/DC converters, as well as a solid state relay for high current power switches. It is also ideal for applications that require high power switching in audio amplifiers, such as stereo and surround sound systems.

Technical Specifications

The GP2M008A060CG is a single N-Channel MOSFET with a maximum drain current of 60A and maximum drain voltage of 100V. It has a maximum Power Dissipation of 250W and a RDS(ON) of 7.3mΩ @ 10V. The device is rated for operation at temperatures ranging from -55°C to 175°C. It has an on-resistance temperature coefficient of 0.025Ω/K and a gate charge temperature coefficient of -0.6V/K. The reverse transfer capacitance is 1.5nF and the package size is TO-220AB Isolated.

Working Principle

The GP2M008A060CG is a single N-Channel MOSFET designed for use as a general purpose power switch. It is a voltage-controlled device, meaning it is operated by the voltage applied to the gate. When the gate voltage is greater than the source voltage, electrons are attracted by the gate and enter the channel region, enhancing the drain-source current flow. When the gate voltage is lower than the source voltage, the electrons repel away from the gate, attenuating the drain-source current flow. This method of operation allows for the efficient switching of large currents with low resistance, making it an ideal power switch for high power applications.

Conclusion

The GP2M008A060CG is a single N-Channel MOSFET designed for use as a power switch in applications such as DC/DC converters and power supplies. It features excellent high speed switching characteristics, low RDS(ON) values, and a wide range of temperature operation. It is an ideal power switch for high power applications such as audio amplifiers, stereo and surround sound systems, and high voltage/high power DC/DC converters.

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