GP2M004A060HG

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GP2M004A060HG Application Field and Working Principle

GP2M004A060HG belongs to transistor\'s family. Specifically, it is a type of Field Effect Transistor (FET) which is a three-terminal semiconductor device consisting of a source (S), drain (D) and gate (G). FETs are further divided into Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), depending on their construction. GP2M004A060HG belongs to MOSFETs, mostly because it is made of metal-oxide-semiconductor material. It belongs to Single MOSFET since it has a single gate. It is available in surface mount (SMD) package as well.

GP2M004A060HG has N-channel enhancement-mode structure. It is also known as logic level MOSFET since it can handle logic-level voltage effectively. It offers low turn-on voltage, low drain-source on-state resistance, low gate-source threshold voltage and low gate charge. GP2M004A060HG is suitable for applications such as power supplies, converters, DC-DC converters, stepper motor drivers, etc. It can also be used in power MOSFET applications which require low gate voltage drive.

Working Principle

A MOSFET works on the principle of channel enhancement. It is dependent on the majority carriers which exist between the source and the drain regions. A flow of current is enabled using the majority carriers when suitable voltage is applied to the drain region, this transistor is then said to be on. A semiconductor is formed between the source and the gate, in the case of GP2M004A060HG this semiconductor is formed by metal oxide semiconductor material. This material acts like a gate/insulator when other voltage is applied across the gate and source of the transistor, thereby increasing the current that is allowed to pass through the transistor.

When +VGS is applied, a depletion region forms between the source and the drain regions. This depletion region is the reverse biased diode, the MOSFET works like a closed switch. The negative voltage on the gate side decreases the width of the depletion region, i.e. enhances the channel, which then allows for current to flow between source and drain as long as the voltage on the source (VSS) is higher than the voltage on the drain (VDS).

When –VGS is applied, a region of higher doping concentration forms between the source and drain regions. This is the enhancement region, which is the forward biased diode, and it works as an open switch. The positive voltage on the gate side increases the width of the enhancement region. The current flows through the transistor until the voltage on the source is less than the voltage on the drain.

To summarise,GP2M004A060HG is a single MOSFET with N-channel enhancement-mode structure and various applications. It works on the principle of channel enhancement and works like a closed switch when +VGS is applied and open switch when –VGS is applied.

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