HUFA75329D3S

HUFA75329D3S is a low-spec and low-cost MOSFET. The MOSFET is a three-terminal device, and HUFA75329D3S is a single-gate device. It is designed for very low power dissipation and leakage current. It is available in both digital and analog versions.

The HUFA75 329D3S is most commonly used in applications such as low-voltage power supplies, comparators, and audio amplifiers. It can be used in general switching applications and in power control applications such as motor control, power switching, and buzzer control. It is also commonly used in low-voltage logic and analog circuits.

The working principle of the HUFA75329D3S is based on the principle of field-effect transistors (FET) operation. FETs are voltage-controlled devices which can be used to modulate the electrostatic force between the gate and the semiconductor material. When a voltage is applied to the gate of the FET, the majority carriers in the semiconductor material are attracted to the gate and form an out-of-equilibrium region. This out-of-equilibrium region generates a potential difference across the FET which can be used to control the current flowing through the FET.

The HUFA75329D3S has a gate-to-source voltage (VGS) rating of 4.5 V, with a maximum gate-to-source leak current of 3 μA. The on-state resistance (RDS) is typically 8.3 mΩ, with a maximum drain-to-source voltage (VDS) rating of 30 V. The maximum continuous drain current is 18 A, with the drain-to-source on-resistance (RDS_on) of 40 mΩ. It also has an on-state gate-source voltage (VGS) of 4.5 V and a total gate charge of 7.5nC.

In summary, the HUFA75329D3S is a low-cost, low-power, single-gate MOSFET. It is designed to operate with a gate-to-source voltage of 4.5 V and a maximum drain-to-source voltage of 30 V. It has a typical on-state resistance of 8.3 mΩ, a maximum continuous drain current of 18 A, and a maximum gate-to-source leak current of 3 μA. The primary applications of the HUFA75329D3S are low-voltage power supplies, comparators, and audio amplifiers.