HUFA76633P3 Allicdata Electronics
Allicdata Part #:

HUFA76633P3-ND

Manufacturer Part#:

HUFA76633P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 38A TO-220AB
More Detail: N-Channel 100V 39A (Tc) 145W (Tc) Through Hole TO-...
DataSheet: HUFA76633P3 datasheetHUFA76633P3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 145W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The HUFA76633P3 is an N-Channel Enhancement Mode MOSFET of the Enhancement Mode MOSFET family. It is a low power MOSFET suitable for portable appliances, computers, networking equipment and other applications where space and power efficiency are important. It offers low parasitic effects, excellent performance, and efficient thermal management in a very small package.

The HUFA76633P3 is a single N-Channel MOSFET that utilizes a VD-H internal structure. It offers low on-resistance of 250mΩ in the small SO-8 package. This is especially beneficial in applications where power budgets are tight and switching performance is critical. Additionally, the on-resistance is statically characterized over the full range of gate-source bias conditions and offers fast switching performance without additional gate-drive circuitries.

The HUFA76633P3 is ideal for use in a variety of applications including DC-DC converters, load switches, motor control, and audio amplifiers. Its combination of low power consumption, small size and excellent electrical characteristics make it a good choice for portable electronics and other applications where portability and power efficiency are important. The HUFA76633P3 is available in two packages: SO-8 and MPAK.

The working principle behind the HUFA76633P3 is fairly simple. When a voltage is applied to the gate, the channel will be activated, allowing current to flow from the source to the drain. This means that electrons can flow from the source to the drain when the gate is open and can be prevented from flowing when the gate is closed. The HUFA76633P3 is designed to perform this switching action in an efficient, reliable manner.

The HUFA76633P3 is also characterized by its low threshold voltage, which is the minimum voltage required to switch the device “on” or “off”. In this case, the threshold voltage is as low as 1.0V, which allows the device to efficiently control low voltage loads. In addition, the HUFA76633P3 has extremely low turn-on and turn-off delays, resulting in faster response times and improved overall performance of the application.

The HUFA76633P3 is a reliable and power efficient device for use in a variety of applications. It offers excellent performance at low gate voltages and can be used to control fast switching applications. As a result, the HUFA76633P3 is ideal for use in portable electronics and other applications where low power consumption, size and excellent electrical characteristics are important.

The specific data is subject to PDF, and the above content is for reference

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