Allicdata Part #: | HUFA76419S3ST-ND |
Manufacturer Part#: |
HUFA76419S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 29A D2PAK |
More Detail: | N-Channel 60V 29A (Tc) 75W (Tc) Surface Mount D²PA... |
DataSheet: | HUFA76419S3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA76419S3ST is a single-chip N-channel, Field Effect Transistor (FET). It is a low-cost, power efficient, high-performance circuit component that is widely used in various modern electronics applications. The HUFA76419S3ST is typically used in switching and voltage level conversion applications. Its miniature size and high efficiency make it a popular choice among designers when it comes to satisfying a wide range of power requirements.
The HUFA76419S3ST is also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). As such, it can be used in a variety of voltage level conversion applications such as switching DC loads, protection circuits and level converters. It can also be used for driving medium current loads such as motors and relays. Moreover, the HUFA76419S3ST is often used in power regulation systems where high efficiency and fast turn-on time is required.
The working principle of a MOSFET is based on the principle of a field effect. MOSFETs are voltage controlled switches and are used to control the flow of current between its source and drain. When a voltage is applied to the gate terminal of the MOSFET, the channel between the source and the drain is created and allows electrons to travel between the two terminals. This forms a conductive path, which is used to control the flow of current. Additionally, the current passing through the MOSFET can be further controlled by the applied voltage to the gate terminal.
The HUFA76419S3ST is composed of an insulated gate, a source and drain, and a channel between them. The insulated gate acts as an insulation barrier between the gate and the source and drain. This insulation barrier prevents the gate from being affected by the currents travelling across the channel between the source and the drain. When a voltage is applied to the insulated gate, it creates an electric field which attracts the electrons and forms a conductive path between the source and the drain, thus allowing current to flow.
The HUFA76419S3ST is suitable for a large variety of power regulation, motor driving and other switching applications. With its low power consumption and high efficiency, the HUFA76419S3ST is a great choice for use in modern electronics applications. Its miniature size and high performance make the HUFA76419S3ST a popular choice among designers when it comes to satisfying a wide range of power requirements.
The specific data is subject to PDF, and the above content is for reference
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