HUFA76419S3ST Allicdata Electronics
Allicdata Part #:

HUFA76419S3ST-ND

Manufacturer Part#:

HUFA76419S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 29A D2PAK
More Detail: N-Channel 60V 29A (Tc) 75W (Tc) Surface Mount D²PA...
DataSheet: HUFA76419S3ST datasheetHUFA76419S3ST Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The HUFA76419S3ST is a single-chip N-channel, Field Effect Transistor (FET). It is a low-cost, power efficient, high-performance circuit component that is widely used in various modern electronics applications. The HUFA76419S3ST is typically used in switching and voltage level conversion applications. Its miniature size and high efficiency make it a popular choice among designers when it comes to satisfying a wide range of power requirements.

The HUFA76419S3ST is also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). As such, it can be used in a variety of voltage level conversion applications such as switching DC loads, protection circuits and level converters. It can also be used for driving medium current loads such as motors and relays. Moreover, the HUFA76419S3ST is often used in power regulation systems where high efficiency and fast turn-on time is required.

The working principle of a MOSFET is based on the principle of a field effect. MOSFETs are voltage controlled switches and are used to control the flow of current between its source and drain. When a voltage is applied to the gate terminal of the MOSFET, the channel between the source and the drain is created and allows electrons to travel between the two terminals. This forms a conductive path, which is used to control the flow of current. Additionally, the current passing through the MOSFET can be further controlled by the applied voltage to the gate terminal.

The HUFA76419S3ST is composed of an insulated gate, a source and drain, and a channel between them. The insulated gate acts as an insulation barrier between the gate and the source and drain. This insulation barrier prevents the gate from being affected by the currents travelling across the channel between the source and the drain. When a voltage is applied to the insulated gate, it creates an electric field which attracts the electrons and forms a conductive path between the source and the drain, thus allowing current to flow.

The HUFA76419S3ST is suitable for a large variety of power regulation, motor driving and other switching applications. With its low power consumption and high efficiency, the HUFA76419S3ST is a great choice for use in modern electronics applications. Its miniature size and high performance make the HUFA76419S3ST a popular choice among designers when it comes to satisfying a wide range of power requirements.

The specific data is subject to PDF, and the above content is for reference

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