Allicdata Part #: | HUFA76443P3-ND |
Manufacturer Part#: |
HUFA76443P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A TO-220AB |
More Detail: | N-Channel 60V 75A (Tc) 260W (Tc) Through Hole TO-2... |
DataSheet: | HUFA76443P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 129nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4115pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 260W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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A HUFA76443P3 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can be used to switch signals between two points. It is a single FET (Field Effect Transistor) and is a type of integrated circuit that has the capability to act as an amplifier and/or a switch. The HUFA76443P3 is often used in digital circuits where low power signals need to be amplified or switched from one point to another.
A MOSFET is fundamentally a field effect transistor (FET) that is composed of an insulated gate with a source, the gate, and drain. The MOSFET is used to control the current flow from the source to the drain by adjusting the voltage applied to the gate. Since the device is composed of a gate, this allows for the signal to be controlled more finely than a traditional transistor. MOSFETs are also able to operate with lower power draw than a normal transistor as well.
In addition to its low power draw, the HUFA76443P3 MOSFET has several properties which make it particularly suitable for its applications. First, it has a low gate-to-drain capacitance (Miller capacitance). This is important because this parameter affects the speed of switching of the device, so if it is low the device can switch signals quickly. Second, the HUFA76443P3 has a high drain-source breakdown voltage. This is important because it ensures that the device can handle high voltage signals and, as a result, can be used in higher current applications. Finally, the HUFA76443P3 has a low thermal resistance. This is important because it ensures that the device does not generate too much heat and can be used in power control applications.
The working principle of the HUFA76443P3 MOSFET is relatively simple. When a voltage is applied to the gate, the field effect is generated. This results in a change in the current flowing from the source to the drain. The strength of the current is determined by the voltage applied to the gate, and the voltage can be fine tuned in order to get the correct level of current. In addition, the device can also be used as a switch as the voltage on the gate can be used to turn the device on or off.
The HUFA76443P3 MOSFET is commonly used in digital circuits for applications such as amplifying digital signals, controlling power, switching digital signals, and even controlling electrical motors. It is also often used in automotive applications, such as fuel injection and engine control systems. Finally, the device is also used in medical, video, and audio systems, where low power signals need to be precisely controlled. In short, the HUFA76443P3 FET is a useful and versatile device that has a wide range of applications.
In conclusion, the HUFA76443P3 is a Metal Oxide Semiconductor Field Effect Transistor which is used in a variety of applications, ranging from digital circuits to medical and video systems. The device is a single FET, and its working principle is based on the idea of applying a voltage to the gate in order to control the level of current flowing from the source to the drain. The device has properties such as low gate-to-drain capacitance, high drain-source breakdown voltage, and low thermal resistance which make it suitable for its various applications. The HUFA76443P3 MOSFET is an essential device for many different types of circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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