| Allicdata Part #: | HUFA75637S3ST-ND |
| Manufacturer Part#: |
HUFA75637S3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 44A D2PAK |
| More Detail: | N-Channel 100V 44A (Tc) 155W (Tc) Surface Mount D²... |
| DataSheet: |  HUFA75637S3ST Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | UltraFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 44A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 20V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 155W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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HUFA75637S3ST is a single enhancement-mode Field Effect Transistor (FET) manufactured by IDT. It is a high-performance, low-voltage FET device designed to lower the voltage normally associated with power IC design. The device ships in a SOT-23 package and is popular in the consumer market.The device has multiple applications in a wide range of consumer electronics, such as power over Ethernet (PoE) switches, multi-channel amplifiers, DC/DC converters, and audio amplifiers. It is also suitable for power supply switching and for driving high-voltage loads in a wide range of consumer and automotive applications. The working principle of HUFA75637S3ST is based on field effect transistor (FET) technology. It is composed of two parts, the gate and the source-drain region. When a small voltage is applied to the gate, it alters the charge distribution around the source-drain region and modulates the current through a channel between them. Thus, the device acts as a current regulating device, allowing current to flow from source to drain when the gate voltage is greater than the threshold voltage.The HUFA75637S3ST has a low on-state resistance of 5Ω and a very low gate drive threshold voltage of 0.5V. These features make the device suitable for applications under high-current and low-voltage switching conditions. Additionally, the device provides fast switching speeds with low power dissipation. The device also has a maximum junction temperature rating of 175 °C, enabling it to handle high power switching applications in extreme temperatures. Other features of the device include its under-voltage lock-out and over-voltage protection. The device also has low standby current operations of 200μA, which reduces power consumption compared to other FETs. In addition, the device has good noise immunity and ESD protection. The HUFA75637S3ST provides a wide and easy to access operating range and is thus suitable for a variety of consumer electronics applications. The device is robust, reliable, and cost-effective, making it a popular choice for designers.
The specific data is subject to PDF, and the above content is for reference
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