HUFA75639S3ST-F085A Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 20V
Series:	Automotive, AEC-Q101, UltraFET™
Rds On (Max) @ Id, Vgs:	25 mOhm @ 56A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUFA75639S3ST-F085A Application Field and Working Principle

HUFA75639S3ST-F085A is a type of transistor known as a Field Effect Transistor (FET). A FET is a three-terminal, non-linear semiconductor device that contains several advantages over other circuit technology. This makes them ideal for use in analog circuits, power amplifiers, voltage regulators, digital logic circuits, and RF (radio frequency) amplifiers and switches.The HUFA75639S3ST-F085A FET is a single-channel, low-power N-channel enhancement-mode MOSFET, which is commonly used in low-power applications such as instrumentation amplifiers and very low-power audio amplifiers. It is specifically designed for use in low-voltage and high-efficiency, low-noise audio applications, and provides high-input impedance and low-noise operation.The HUFA75639S3ST-F085A is based on a small-signal MOSFET, which can be used to construct circuits that are capable of both amplification and switching applications. The device is commonly referred to as an “N-Channel Vertical Diffused Metal Oxide Semiconductor Field Effect Transistor” or ‘V-FET’, due to its unique structure.A FET\'s main component is its gate, which is made up of a highly doped (n or p) substrate material. When current is passed through the gate, an electric field is generated that affects the conductance of a channel within the transistor, allowing it to modulate the current transit through the semiconductor. The FET will then act as either an amplifier or a switch, depending on the type of circuit it is placed in.The HUFA75639S3ST-F085A MOSFET is made up of a n-type substrate material, and a p-type layer sandwiched between two n-type layers. The gate is split into three sections: the gate, drain, and source. As the current passes through the gate, an electric field is created within the n-type substrate, forcing electrons through the p-type layer between the two n-type layers. This creates a depletion zone between the p-type and n-type layers, allowing the current to pass through the device and into the drain. The current is then either amplified or switched, depending on the circuit.Due to its superior noise characteristics, the HUFA75639S3ST-F085A is primarily used in high-performance audio applications, such as amplifiers and preamps. Many digital instruments make use of the FET’s high-input impedance and low-noise operation as well. Additionally, the HUFA75639S3ST-F085A can also be used in voltage regulator, power amplifiers, and low-noise amplifiers, as well as in digital logic circuits. In conclusion, the HUFA75639S3ST-F085A is a single-channel, low-power N-channel enhancement-mode MOSFET typically used in low-power applications such as instrumentation amplifiers, preamps, and stereo amplifiers. It is also commonly used in digital instruments, power amplifiers, voltage regulators, and other types of logic circuits. Due to its high-input impedance and low-noise operation, the HUFA75639S3ST-F085A can provide superior noise performance in applications where a low-noise amplifier is desired.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description