Allicdata Part #: | HUFA75329S3S-ND |
Manufacturer Part#: |
HUFA75329S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 49A D2PAK |
More Detail: | N-Channel 55V 49A (Tc) 128W (Tc) Surface Mount D²P... |
DataSheet: | HUFA75329S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 49A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA75329S3S is a single-channel N-channel MOSFET (metal oxide silicon field effect transistor), which is a type of insulated gate electronic device that has a number of important technical characteristics compared to traditional bipolar transistors. It is an ideal choice for applications that require high current, voltage, and power gain. The HUFA75329S3S offers a wide range of applications and makes operation of power circuits easier than ever.
When using this product, it is necessary to understand its application field and its working principle. The HUFA75329S3S is designed for low-frequency switch circuit applications, such as on/off control of motor, battery charge/discharge control, and other application fields. It can easily accomplish the high-frequency switching operations needed in the fields of system board and power management circuits.
The working principle of the HUFA75329S3S is fairly straightforward. To control the ceramic gate of the device, a voltage needs to be applied between its gate and its source terminals. This voltage then triggers an electron flow through the channel between the source and the drain terminals, allowing current to flow. The voltage between the gate and the source must remain stable in order for the electrons to pass through. To switch the device off, the gate voltage can either be increased or decreased, depending on which type of MOSFET is being used.
To get the most out of the HUFA75329S3S, it is important to understand its limitations. It has a maximum drain-source voltage of 175V and a maximum drain current of 59A. This is relatively low compared to other MOSFETs and is not suitable for applications that require high voltages. Additionally, the temperature range should be taken into consideration, as the HUFA75329S3S allows operation at temperatures up to 150°C.
The HUFA75329S3S is an excellent choice for many applications, due to its low power consumption and ease of operation. Its application field and working principle are easily understood and it is a reliable device for many low-frequency applications. If a device with high current, voltage, and power gain is needed, then the HUFA75329S3S should definitely be considered.
The specific data is subject to PDF, and the above content is for reference
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