HUFA75329S3ST Allicdata Electronics
Allicdata Part #:

HUFA75329S3ST-ND

Manufacturer Part#:

HUFA75329S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 49A D2PAK
More Detail: N-Channel 55V 49A (Tc) 128W (Tc) Surface Mount D²P...
DataSheet: HUFA75329S3ST datasheetHUFA75329S3ST Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 128W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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HUFA75329S3ST is a small signal MOS transistor. It is made up of four-terminal channel used to control the current between two nodes of a circuit. One of the distinctive characteristics of the HUFA75329S3ST is that it can switch very quickly at a low voltage and low power consumption, which makes it particularly suitable for applications such as amplifer, radio frequency switch and analog switching. HUFA75329S3ST is a single NMOS transistor, meaning it is designed specifically for switching digital signals.

The HUFA75329S3ST has three pins; the gate (G), source (S) and drain (D). The gate controls the flow of electrons through the channels between the source and the drain, effectively controlling the on/off state of the transistor. When the gate receives a higher voltage than the source, the transistor is said to be in the “on” state and electrons flow from the source to the drain. When the voltage of the gate is lower than the source, the transistor is said to be in the “off” state and no electrons flow from the source to the drain.

The HUFA75329S3ST also has several other features that make it useful in various applications. For instance, it features a low drain-source on resistance of 49.0Ω and a high current capability of 2A max., making it suitable for high current applications such as motor and power management. The device is also highly versatile; it can be used in a wide range of voltage and temperature conditions, making it suitable for a variety of applications

In addition, the HUFA75329S3ST has several other advantages that make it an attractive option for designers. For instance, it has a low power consumption of only 1.2W and is RoHS compliant, making it a good choice for green product designs. Furthermore, the device has excellent noise immunity, meaning it is suitable for high reliability applications.

The HUFA75329S3ST can be used in a variety of applications, including amplifiers, radio frequency switches and analog switching circuits. In an amplifier, the device functions as an input and output switch, allowing the signal to be amplified by voltage gain. In a radio frequency switch, the device is used to switches signals both within and between different frequencies. Finally, in an analog switching circuit, the HUFA75329S3ST is used as an on/off switch, controlling the enable and disable pins as required.

In summary, the HUFA75329S3ST is a MOS transistor that is notable for its low voltage, low power consumption, high current capability and low on resistance, making it particularly suitable for applications such as amplifiers, radio frequency switch and analog switching circuits.

The specific data is subject to PDF, and the above content is for reference

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