Allicdata Part #: | HUFA75329S3ST-ND |
Manufacturer Part#: |
HUFA75329S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 49A D2PAK |
More Detail: | N-Channel 55V 49A (Tc) 128W (Tc) Surface Mount D²P... |
DataSheet: | HUFA75329S3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 49A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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HUFA75329S3ST is a small signal MOS transistor. It is made up of four-terminal channel used to control the current between two nodes of a circuit. One of the distinctive characteristics of the HUFA75329S3ST is that it can switch very quickly at a low voltage and low power consumption, which makes it particularly suitable for applications such as amplifer, radio frequency switch and analog switching. HUFA75329S3ST is a single NMOS transistor, meaning it is designed specifically for switching digital signals.
The HUFA75329S3ST has three pins; the gate (G), source (S) and drain (D). The gate controls the flow of electrons through the channels between the source and the drain, effectively controlling the on/off state of the transistor. When the gate receives a higher voltage than the source, the transistor is said to be in the “on” state and electrons flow from the source to the drain. When the voltage of the gate is lower than the source, the transistor is said to be in the “off” state and no electrons flow from the source to the drain.
The HUFA75329S3ST also has several other features that make it useful in various applications. For instance, it features a low drain-source on resistance of 49.0Ω and a high current capability of 2A max., making it suitable for high current applications such as motor and power management. The device is also highly versatile; it can be used in a wide range of voltage and temperature conditions, making it suitable for a variety of applications
In addition, the HUFA75329S3ST has several other advantages that make it an attractive option for designers. For instance, it has a low power consumption of only 1.2W and is RoHS compliant, making it a good choice for green product designs. Furthermore, the device has excellent noise immunity, meaning it is suitable for high reliability applications.
The HUFA75329S3ST can be used in a variety of applications, including amplifiers, radio frequency switches and analog switching circuits. In an amplifier, the device functions as an input and output switch, allowing the signal to be amplified by voltage gain. In a radio frequency switch, the device is used to switches signals both within and between different frequencies. Finally, in an analog switching circuit, the HUFA75329S3ST is used as an on/off switch, controlling the enable and disable pins as required.
In summary, the HUFA75329S3ST is a MOS transistor that is notable for its low voltage, low power consumption, high current capability and low on resistance, making it particularly suitable for applications such as amplifiers, radio frequency switch and analog switching circuits.
The specific data is subject to PDF, and the above content is for reference
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