Allicdata Part #: | HUFA75333P3-ND |
Manufacturer Part#: |
HUFA75333P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 66A TO-220AB |
More Detail: | N-Channel 55V 66A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | HUFA75333P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 66A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA75333P3 is a field effect transistor (FET) from Aeroflex that combines the best features of both MOSFETs and FETs and is a single device for use in low speed switching applications. It is a MOSFET combined with a depletion mode FET, which are designed to provide superior performance in fast switching and low-impedance switching applications.
The HUFA75333P3 is the latest device in the series of FET-MOSFET hybrids from Aeroflex. It offers several unique features, including an on-resistance of 50 mOhm, a breakdown voltage of 70 V, and excellent ESD protection up to 2 kV.
It has a wide range of applications including power supply units, motor control, switching and timing, motor drivers, and audio amplifiers. It is also suitable for switching and for controlling the speed of motors. It can be used for applications that require low voltage and low power.
The HUFA75333P3 can be operated in linear or low frequency mode to reduce the stress on the drain and gate voltages. The device has an intrinsically low input and output capacitance, making it suitable for fast switching applications, and it is designed to be reverse biased and exhibit fast switching characteristics.
The device is also designed to have improved temperature performance, which means it can withstand a wide range of temperatures while still maintaining excellent device performance. It also supports low power consumption and its low profile makes it suitable for the use in PCBs.
The HUFA75333P3 is designed to operate in a variety of conditions and has a wide range of ratings for different voltage and temperature requirements. The device is rated for up to 200V and up to 125C. It is also capable of performing withstanding voltages up to 1500V and a current rating of up to 5 mA. The device is also capable of providing ESD protection up to 8 kV.
The working principle of the HUFA75333P3 MOSFET-FET hybrid is similar to that of a conventional FET. The source is connected to ground, the gate is connected to the voltage source, and the drain is connected to the load. The gate voltage is used to control the flow of current through the device. When the gate voltage is greater than the threshold voltage, the device will turn on and allow current to flow through the channel. When the gate voltage is lower than the threshold voltage, the device will turn off and stop current flow through the channel. The drain and source voltages will determine the on and off state of the device.
The HUFA75333P3 MOSFET-FET hybrid is designed to have superior characteristics compared to standard FETs and MOSFETs. It offers lower on resistance, breakdown voltage, and better ESD protection as well as a lower profile for use in PCBs. It is suitable for various low power and low voltage applications, and its wide range of ratings makes it suitable for a variety of conditions from low to high temperature.
The specific data is subject to PDF, and the above content is for reference
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