HUFA75345S3S

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	325W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	275nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	7 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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HUFA75345S3S Application Field and Working Principle

The HUFA75345S3S is a silicon-gate surface-mounted insulated gate field-effect transistor (IGFET) with a high-performance single-channel enhancement mode. This MOSFET offers an interior metal silicon gate whose construction facilitates both an ergonomic switch and low on-resistance. It has a maximum gate threshold voltage of -1.5 V, a maximum gate-source voltage of 8 V, and a maximum drain-source voltage of 55 V. The HUFA75345S3S is capable of handling up to 15 A of drain current. These features make it suitable to function as a switch or voltage-operated device in limited space applications.

Application Field

The HUFA75345S3S MOSFET is widely used in automotive and industry, field applications such as motor control and drive circuits. It can also be employed for A/D converter applications and other analog circuits. Other applications include boost transistor circuits, spindle motors, power supplies and regulators, DC-DC converters, battery switches, communication and industrial equipment, audio amplifiers and densimeters.

Working Principle

The HUFA75345S3S operates according to the principle of field-effect transistor (FET) technology. A voltage is applied between the gate and the source. This causes an electric field to form across a thin layer of silicon semiconductor material that comprises the transistor\'s gate. This electric field modifies the electrical properties of the semiconductor material, allowing a current to flow between the drain and the source terminals. When the gate voltage is maintained above Vgs_th (threshold gate voltage), the device will remain in an \'on\' state, allowing for current to flow through the source and drain. When the voltage is reduced to below Vgs_th, the device will return to an \'off\' state, cutting off the current flow across the source and drain.

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