HUFA75645S3S Discrete Semiconductor Products |
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Allicdata Part #: | HUFA75645S3STR-ND |
Manufacturer Part#: |
HUFA75645S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A D2PAK |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²... |
DataSheet: | HUFA75645S3S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3790pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 238nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA75645S3S is a lateral power MOSFET, a type of N-channel field-effect transistor. It is used as an active switch in power circuits, meaning it can be used to control the conductivity of circuits. Its applications include high power switching, DC-to-DC conversion, and in voltage regulation circuits. This article will discuss the general working principle of the HUFA75645S3S, as well as the types of applications in which it can be used.
Power MOSFETs such as the HUFA75645S3S have four main terminals; the Source, Drain, Gate, and Body. The Source and Drain are where the current enters and exits the transistor, while the Gate is the control signal which determines the flow of current from the Source to the Drain. The Body terminal is connected to ground, and it is primarily used for insulation and to reduce the effects of parasitic capacitances which can affect performance.
The working principle of the HUFA75645S3S is based on a phenomenon known as the "MOS effect". When an electric field is applied to a MOS device, a physical change occurs inside the device which causes the current flow between the Source and the Drain to increase or decrease. This effect is used in MOSFETs to control the voltage dropped across the source-drain terminals. When a voltage is applied to the Gate terminal, it creates an electric field inside the transistor which changes the conductivity of the two terminal.
In order to take advantage of the MOS effect, a certain type of current must be applied to the Gate terminal. This type of current is known as the "gate voltage", and it must be carefully controlled in order to achieve the desired results. The voltage applied to the Gate terminal must be within the threshold voltage range of the HUFA75645S3S, which is typically between +15V and -15V.
The HUFA75645S3S is most often used in power switching applications, such as for power supply design, motor control, inverter circuits, and more. It is also used in DC-DC converters, where it is used to reduce the voltage level of a given signal. Other common applications include voltage regulators, circuit protection, and interface circuits. In each of these applications, the HUFA75645S3S can be used to regulate the current and/or voltage present in the given circuit.
The HUFA75645S3S is a versatile power MOSFET, and it has various applications in a wide range of industries. It is particularly well-suited for applications where low on-state resistance, high speed switching, and low power consumption are required. Its simple construction and low-cost make it a popular choice for many types of power electronics projects.
The specific data is subject to PDF, and the above content is for reference
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