HUFA75823D3ST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HUFA75823D3ST is a power MOSFET. It is a single enhancement-mode, n-channel power field effect transistor (FET) intended for use in power conversion application in power systems such as power sources, bulldog chips and personal computer power applications. It features a breakdown voltage of 800V, a continuous drain current at 25°C of 1.2A, an on-state resistance of 1mΩ and a threshold of 2V. The HUFA75823D3ST power MOSFET is characterized by its low on-state resistance, which allows it to efficiently switch high current loads. This makes it suitable for use in applications such as switch-mode power supply, which require a low on-state resistance for optimal efficiency.

The working principle of the power MOSFET is simple. It is based on the basic principle of semiconductor device operation. This means that the power MOSFET works like a switch that can be used to control the flow of electricity from one source to another. The device utilizes the gate voltage, which is applied to the gate of the FET and the drain current, to control the flow of electrons. When a voltage is applied to the gate of the FET, it will either block the current or allow it to flow, depending on the applied voltage. If the voltage applied is greater than the threshold voltage of the FET, it will allow the current to flow. On the other hand, if the voltage applied to the gate is lower than the threshold voltage, it will block the current.

The HUFA75823D3ST FET is also designed with improved power dissipation capabilities, which allow it to handle high current applications. It is also designed for fast switching speeds and minimum capacitance. This allows it to provide efficient power switch operation for power systems applications. It is widely used in power conversion applications, such as in regulated power supplies and in low side switch circuits. The HUFA75823D3ST is also used in digital logic families, such as CMOS, as part of the load switching logic family.

In conclusion, the HUFA75823D3ST is a power MOSFET with a breakdown voltage of 800V, a continuous drain current of 1.2A, an on-state resistance of 1mΩ, and a threshold voltage of 2V. It is designed with improved power dissipation capabilities and fast switching speeds. These features make it suitable for use in power conversion applications, such as in regulated power supplies and in low side switch circuits. It is also used in digital logic families, such as CMOS, as part of the load switching logic family.

The specific data is subject to PDF, and the above content is for reference