HUFA75829D3ST

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	110 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The HUFA75829D3ST is a single high side N channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is commonly used for power switching. They are generally utilized in power supply and industrial applications when high side gating is required.The HUFA75829D3ST is in a very compact SOT-223 (Small Outline Transistor) and superfet package that can save overall size and cost of the circuit. Its design allows for a low on-resistance and a low gate-bias voltage, making it highly suitable for automotive applications.The device features an extended design lifetime and a total power dissipation of up to 0.7V, making it more reliable and suitable for rugged automotive environments. Furthermore, the low gate-to-source impedance makes sure that the performance is not going to degrade with temperature variations.A small gate capacitance of 1.5pF and a relatively small junction capacitance of 16.3pF provide an improved switching performance. An R DS(on) rating as low as 0.028 at 10V and 0.020 at 4.5V also contributes to a faster switching time. The typical drain-source breakdown voltage of the HUFA75829D3ST is 28V with a maximum drain current of 30A (continuous).In summary, the HUFA75829D3ST makes an excellent choice for high current, cost-saving applications in power supply or industrial applications that require a low on-resistance, high switching speed and low gate-bias voltage. Due to the size and its top-notch performance specs, it is suitable for a wide variety of industries and applications.

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