Allicdata Part #: | HUFA76419S3S-ND |
Manufacturer Part#: |
HUFA76419S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 29A D2PAK |
More Detail: | N-Channel 60V 29A (Tc) 75W (Tc) Surface Mount D²PA... |
DataSheet: | HUFA76419S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA76419S3S device from HTC is a P-channel metal-oxide-semiconductor field-effect transistor. It is often referred to simply as a MOSFET and is a commonly used type of transistor. This device is intended for use in telecommunications, robotics, industrial and automotive applications. The HUFA76419S3S is specifically designed as a “low-voltage power switch” and boasts an exceptionally low on-resistance (RDS(on)).
Working Principle of HUFA76419S3S MOSFET
MOSFET is a three-terminal device that serves as a switch or amplifier. It works on the principle that gate voltage controls channel current. The HUFA76419S3S has a highly resistive channel when it is unpowered, with minimal leakage current. When a voltage is applied to its gate terminal, a conductive channel is created between its source and drain terminals. This means that drain-source current can flow from the source to the drain.
The HUFA76419S3S is equipped with an internally integrated high-side driver, So the MOSFET can be driven with a PWM, analog, or digital signal. The on-resistance of this device is exceptionally low, there is a low gate drive requirement, and fewer components are required.
Applications of HUFA76419S3S MOSFET
Due to its high-incidence characteristics, the HUFA76419S3S is ideally suited for applications requiring high speed or synchronous operations. It can be used for driving solenoid valves, and for providing simple on/off control in high-frequency, power-switching applications such as motor controls, and DC-DC switching converters. Its low on-resistance and low gate-charge also make it suitable for applications where power dissipation needs to be minimized.
In addition, the HUFA76419S3S can be used as an amplifier in telecommunications systems, industrial systems, and automotive systems. It is particularly useful in High definition multimedia interfaces (HDMIs) as it transmits high frequency signals without distortion. It is also suitable for use in Data Acquisition Systems, Circuits with optical transistors, and other high-power RF and microwave amplifiers.
Conclusion
The HUFA76419S3S is a versatile, low voltage power switch from HTC, specifically designed for applications requiring high speed and synchronous operations, including motor controls, telecommunications, industrial systems, and Data Acquisition Systems.
It features a low on-resistance and low gate drive requirement, as well as an internally integrated high-side driver, making it an ideal choice for applications where power dissipation needs to be minimized. It is also suitable for use in High definition multimedia interfaces (HDMIs) as it transmits high frequency signals without distortion.
The specific data is subject to PDF, and the above content is for reference
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