Allicdata Part #: | HUFA76432P3-ND |
Manufacturer Part#: |
HUFA76432P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 59A TO-220AB |
More Detail: | N-Channel 60V 59A (Tc) 130W (Tc) Through Hole TO-2... |
DataSheet: | HUFA76432P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1765pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 59A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76432P3 is an advanced Field Effect Transistor offering high electron fields known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). HUFA76432P3 can operate on both high voltages and high currents which makes them the ideal choice for applications in industrial, automotive and consumer applications. They are capable of handling a wide range of switching and power applications for higher power productivity.
The HUFA76432P3 is a single-gate MOSFET which means that it is controlled by a single input. This is convenient for users as it simplifies the control signal interface and reduces the power dissipation in the switch. Additionally, the MOSFET speeds up the response time and makes overall system operations more efficient. The single-gate MOSFET offers both the low on-resistance and the wide drain-source voltage capabilities. Unlike other FETs which typically require multiple input gates, the HUFA76432P3 delivers high performance switching with a single-gate structure, making it easier to design systems with reduced R&D time.
HUFA76432P3 is an excellent solution for applications involving low on-state resistance and output voltage protection. The device offers high switching speeds which enable it to withstand up to 50V of drain-source voltages. HUFA76432P3 is built using the latest PowerTrench process technology, resulting in substantial improvements in power rail switching efficiency and output voltage protection. Additionally, the device can be used with up to 10A of output current. Thanks to its advanced features, the HUFA76432P3 is ideal for high frequency power switching and motor control.
The working principle behind HUFA76432P3 is based on the field effect. A field effect is the control of current flow through a semiconductor material by an applied electric field. In MOSFETs, the field effect is implemented by three terminals - gate, source and drain. In the single-gate construction of the HUFA76432P3, the gate terminal acts as the control terminal which controls the level of the current flowing between the source and the drain. By varying the gate voltage, the drain-source current can be regulated, enabling the device to perform fast switching operations.
The HUFA76432P3 is a versatile device due to its advanced manufacturing process, low on-state resistance and high switching speeds. It is an ideal choice for applications in industrial, automotive and consumer products such as power inverters, motor control, DC/DC and AC/DC converters and switching regulators. The single gate construction makes it easy to use and reduces the power dissipation in the switch. Additionally, the advanced PowerTrench process technology improves the output current, power efficiency and output voltage protection.
The specific data is subject to PDF, and the above content is for reference
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