Allicdata Part #: | HUFA76432S3S-ND |
Manufacturer Part#: |
HUFA76432S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 59A D2PAK |
More Detail: | N-Channel 60V 59A (Tc) 130W (Tc) Surface Mount D²P... |
DataSheet: | HUFA76432S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1765pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 59A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76432S3S is a single-channel enhancement mode MOSFET (metal oxide semiconductor field-effect transistor). It is a power switch with high power density, high voltage and high breakdown. It fits various types of applications, like load switching applications and load-sensing applications, as well as signal transformation and amplification applications.The HUFA76432S3S is a two-terminal voltage controlled device. One of its distinctive features is the presence of a gate voltage that can hold the drain and source in either a conductive state or a nonconductive state. When the gate voltage of the device is applied, the voltage is applied onto a tiny gate which lies in between the drain and source. This gate acts as a “gatekeeper,” controlling the flow of current from the drain to the source.The main advantage of this MOSFET is its low power dissipation. The amount of power consumed generally does not exceed 0.4 watts. This is mainly because of the absence of mobile charges in the underlying substrate. With the proper selection of circuits, the HUFA76432S3S can display low on-resistance levels and low capacitances. This ensures efficient and reliable switching when used in designs involving motor drives, loads and switching analog signals.The HUFA76432S3S also offers a wide range of current ratings. For instance, a maximum load current of up to 7A, a maximum drain source voltage of 40V, and a maximum power dissipation of 65W can be achieved. The device also has a maximum junction temperature of 150°C. When coupled with its wide operating temperature range, the HUFA76432S3S can be a reliable choice in even the toughest of environments.In terms of applications, the HUFA76432S3S is mainly used in the automotive, industrial, and consumer electronics industries. In automotive applications, the MOSFET is used in applications like power steering, fuel injection, anti-lock braking systems, volt meters, and air bags. In industrial applications, the HUFA76432S3S is used in applications where fast switching is required like in switched mode power supplies (SMPS), controllers, lighting, and actuators. In consumer electronics applications, the MOSFET is used for digital to analog conversion, radio frequency amplifiers and switching.In conclusion, the HUFA76432S3S is an excellent choice for applications where reliable load switching and signal transformation is required. With its low power dissipation and wide range of current ratings, the HUFA76432S3S is a powerful and versatile MOSFET that can offer superior performance and reliability in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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