HUFA76609D3ST Discrete Semiconductor Products

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HUFA76609D3ST is a product of Vishay Siliconix, which is a Type-N channel high-performance enhancement mode vertical DMOS FET (field effect transistor). The device is available in PowerPAK SO-8 and PowerPAK SC-63. HUFA76609D3ST is also part of the Si9177 and Si9600 Programmable High and Low Side Drivers. It has a low on-resistance RDS(on) of 7mΩ at 4.5V VGS and 6.5mΩ at 10V VGS, making it suitable for high power applications.

The HUFA76609D3ST is widely used in applications such as automotive, electric powertrains and robotics, industrial motors, harsh environment machines, and heavy duty machines. It provides low on-resistance at high voltage and temperature. It also has excellent thermal stability, reverse blocking capability, and greater operating frequency than standard MOSFETs. Furthermore, it is optimized for use in high current applications, and its compact footprint saves valuable space on printed circuit boards.

The working principle of HUFA76609D3ST is based on enhancement mode vertical DMOS FET technology. When a voltage is applied to the gate terminal, a vertical drain-to-source channel forms between the source and the drain and a conducting path for electrons is established. Electrons flow from source to drain, allowing current to flow. As the drain current flows, the on-resistance or RDS(on) lowers, resulting in reduced power loss and in efficient operation.

HUFA76609D3ST is a great choice for applications that require low on-resistance at high voltage and temperature. It also offers excellent thermal stability and reverse blocking capability, making it perfect for applications such as automotive, electric powertrains and robotics, industrial motors, harsh environment machines, and heavy duty machines. The device’s low on-resistance, high frequency performance, and compact packaging make it a great choice for applications that require power efficiency and reliability.

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