HUFA76639S3ST

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	86nC @ 10V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	26 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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HUFA76639S3ST is a single N-channel enhancement mode MOSFET developed to use in the low power applications. The device offers low operating voltage typically around 5V and low gate current for capacitive coupling applications or for gate drive circuits. With its low on resistance and fast switching speed, it is suitable for circuit designs such as current sensing, driving indicators or for use with transistors in power line regulators. HUFA76639S3ST construction is normally in a small surface-mount flat plastic packaging. The mobility of electrons along with the static charge carrier density makes it convenient to be used in low-power gate driver designs. The device includes a gate oxide layer and gate electrode layer that ensure the charge carriers are protected and the gate voltage is maintained constant.The application field of HUFA76639S3ST includes cell phone, computers, mobile phones, home appliances, industrial automation and control, television and various other electronic items. HUFA76639S3ST is also used in power supplies, data converters, mid-range amplifiers and oscillators. The device is suitable for automotive applications and commercial applications due to its small size and ruggedness. The working principle of HUFA76639S3ST is based on the principle of enhancement mode MOS device. In case of an N-channel device, a positive gate voltage is required to turn the device "ON". Once turned "ON", electrons from the channel can flow from the source to the drain. The current flow from the drain is depended on the drain-to-source voltage and the gate-to-source voltage. This effect is used in many circuit designs, such as voltage transmission, voltage level shifters and current limiting applications. Moreover, the operation of the device is also dependent on the gate-to-source voltage. The voltage to be applied is the sum of the drain-to-source voltage and the threshold voltage. The threshold voltage is the voltage which needs to be present at the gate of the MOSFET to turn it “ON”. The higher the drain-to-source voltage, the more current will be allowed to flow through the channel. Therefore, the device is suitable for applications such as current sensing, driving indicators or as a main switching device in various power line regulator circuits. In a N-channel device, there is no current flow from the drain to the source when the gate-to-source voltage is below the threshold voltage. Therefore, the device acts like an open switch, allowing current to flow from the source to the drain only when the gate-to-source voltage is above the threshold voltage. In other words, the device is normally OFF and turns “ON” only when a voltage is applied to the gate of the MOSFET.HUFA76639S3ST also offers low gate current to reduce the power consumption. Generally, MOSFETs are operated with logic level signals, but with the device\'s low gate current it can be operated with capacitively coupled logic signals. This allows gate drive circuits to be used more efficiently and reduces the power consumption compared to other MOSFETs. The device also has low operating voltage. This allows the device to be used in low voltage applications such as powering cell phones, computers and other electronic items. Additionally, the device is resistant to damage caused by electrostatic discharge (ESD) and can work well in hostile environments. The superior ESD durability of the device makes it ideal for use in some of the most challenging electronic applications. In conclusion, the HUFA76639S3ST is a single N-channel enhancement mode MOSFET suited for various low power applications. It has a low on resistance and fast switching speed, making it suitable for current sensing, driving indicators and other low power circuit designs. The device is also small in size and is able to handle high ESD voltages, which make it suitable for use in many challenging electronic applications.

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