HUFA76645S3ST-F085 Discrete Semiconductor Products |
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Allicdata Part #: | HUFA76645S3ST-F085TR-ND |
Manufacturer Part#: |
HUFA76645S3ST-F085 |
Price: | $ 1.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A D2PAK |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²... |
DataSheet: | HUFA76645S3ST-F085 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.19010 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 153nC @ 10V |
Series: | Automotive, AEC-Q101, UltraFET™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76645S3ST-F085 is a medium power three-terminal N-channel trench-gate MOSFET developed specifically for use in general purpose applications. It can be used in power-supply applications, high frequency switching, motor control, and other applications. The device has an extremely low on-state resistance and extremely high off-state voltage.
The HUFA76645S3ST-F085 is a three-terminal MOSFET consisting of an N-channel silicon oxide layer between the gate and the source/drain contacts. It is a so-called \'trench-gate\' type device and has a large area gate. This is to ensure low on-state resistance and gate charge. The gate of the MOSFET is insulated from the channel with a thick layer of silicon oxide.
The device is designed to provide a high input impedance which allows it to switch current with very low power dissipation. This makes it ideal for use in high frequency switching applications where low power loss is essential. The on-state resistance of the device is very low and this makes it suitable for use in power-supply applications. The high off-state voltage makes it suitable for use in motor control.
The working principle of the HUFA76645S3ST-F085 is based on the principle of the MOSFET. It employs a silicon oxide layer between the gate and the source/drain contacts. The gate is insulated from the conductive channel with a thick layer of silicon oxide. When a voltage is applied to the gate, it creates a field effect across the barrier and electrons are drawn from the source to the drain. This creates a low on-state resistance and a low gate charge. The off-state voltage is very high and this makes it ideal for motor control applications.
The HUFA76645S3ST-F085 can be used in a wide variety of applications including power-supply, high frequency switching, motor control, and more. It is a cost-effective solution for a wide range of general purpose applications. The device has a low on-state resistance and a high off-state voltage, making it ideal for power-supply and motor control applications. The device\'s input impedance ensures low power dissipation and makes it suitable for high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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