IPB60R099CPATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R099CPATMA1TR-ND

Manufacturer Part#:

IPB60R099CPATMA1

Price: $ 3.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 31A D2PAK
More Detail: N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG...
DataSheet: IPB60R099CPATMA1 datasheetIPB60R099CPATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 2.88855
Stock 1000Can Ship Immediately
$ 3.19
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The IPB60R099CPATMA1 is an insulated gate bipolar transistor (IGBT) module made by Infineon and is popular for use as a main switch in power electronic applications. In this article, we\'ll take a closer look at this IGBT module and discuss its application field and working principle.

Introduction to IGBTs

IGBTs are power transistors similar to MOSFETs, but with a larger current handling capability. Like MOSFETs, they use voltage to control their gate and appear as a variable resistor between their source and drain, as shown in the diagram below.

IGBT Diagram

They can handle a higher switching frequency and a larger current, making them ideal for inverter-based applications such as motor control, lighting, and renewable energy, as well as for voltage regulation, switching and power control. The combination of the advantages of MOSFETs and bipolar transistors makes IGBTs ideal for high-power applications.

IPB60R099CPATMA1 Application Field and Working Principle

The IPB60R099CPATMA1 IGBT module is capable of delivering high power and have a better overall efficiency than other power devices. The power range of this module is up to 500 kW and it provides a unique combination of fast switching, low conduction losses and robust operation. It is commonly used in a variety of motor control applications, including home appliances, air-conditioners and industrial motor drives, as well as in renewable energy and energy storage systems.

The working principle of the IPB60R099CPATMA1 is simple. When a positive voltage is applied to the gate, the transistor is turned on, allowing current to flow from the source to the drain. When the voltage is removed, the transistor is turned off and the current flow is blocked. This process can be repeated thousands of times per second, allowing for very fast switching of the power.

The IPB60R099CPATMA1 also features wide temperature range (-40 to 125 degrees Celsius) and a maximum junction temperature of 175 degrees Celsius. It also has low current leakage, which makes it ideal for applications that require low power consumption.

Conclusion

The IPB60R099CPATMA1 is a versatile IGBT module that can be used in a wide range of applications, including motor control, lighting, renewable energy and energy storage systems. Its advantages include fast switching, low conduction losses and robust operation. It is also capable of withstanding high temperatures and has low current leakage, making it an ideal choice for power applications.

The specific data is subject to PDF, and the above content is for reference

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