IPB60R120P7ATMA1

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IPB60R120P7ATMA1 is part of the International Rectifier’s 900V P7 series of high voltage MOSFETs. These Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are designed to serve as easily driven power switches with high-efficiency, high-speed and low-voltage capabilities. These MOSFETs are suitable for many physically demanding applications such as air conditioners, refrigerators, electric vehicles and power supplies.

The IPB60R120P7ATMA1 MOSFET features a 60mΩ typical RDS(on) at 100V of drain to source voltage and a high-temperature 175°C maximum operating junction temperature. This MOSFET is designed to provide superior switching performance in applications such as home and professional appliances as well as electric vehicles.

The International Rectifier’s 900V P7 series of high voltage MOSFETs utilizes an advanced silicon-based technology to provide superior low on-resistance power switching performance and fast switching times. The MOSFETs’ gate charge characteristics are optimization through the use of optimized gate threshold voltage range and low gate charge. This reduces the switching time of the MOSFET without sacrificing the device’s leakage current.

The IPB60R120P7ATMA1 MOSFET provides a low-voltage performance and high-efficiency power switching at a low cost. The device features low gate charge, low on-resistance, high-switch frequency and high current capacity. These features make the device ideal for applications such as power supplies, air conditioners, refrigerators and electric vehicles.

The 900V P7 series of high voltage MOSFETs’ work on the principle of an Insulated Gate Bipolar Transistor (IGBT). A MOSFET is a three-terminal device, where the three terminals are the source (S), gate (G) and drain (D). The MOSFET works on the principle of channel formation. When voltage is applied to the gate, it creates an inversion channel in the substrate which allows the current to flow through the channel. This flow is controlled by the amount of voltage applied to the gate.

The IPB60R120P7ATMA1 MOSFET’s high-voltage capability is achieved through the use of a reverse-isolation trench. This trench allows for better isolation between the source and drain of the device which improves its breakdown voltage. Additionally, a low on-resistance substrate is used to reduce the MOSFET’s output capacitance. This improves its current-handling capability.

In summary, the IPB60R120P7ATMA1 MOSFET is part of the 900V P7 series of high voltage MOSFETs by International Rectifier. This MOSFET is suitable for many physically demanding applications such as air conditioners, refrigerators, electric vehicles and power supplies. It works on the principle of an Insulated Gate Bipolar Transistor (IGBT) and its high-voltage capability is achieved through the use of a reverse-isolation trench. This device features low gate charge, low on-resistance, high-switch frequency and high current capacity.

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