IPB65R190CFDAATMA1

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IPB65R190CFDAATMA1 transistor is a type of FET (field-effect transistor) of the MOSFET (metal-oxide semiconductor FET) family. As a single FET, it has one gate and hence two electronically connected terminals, the source and the drain. In the MOSFET family, the channel is made from an inversion layer at the interface between the semiconductor and an insulator, the gate, making this type of transistor an insulated gate field-effect transistor.The IPB65R190CFDAATMA1 is particularly versatile and suitable for digital, analog and mixed signal circuits. It is suitable for applications that demand high voltage and high current, including automotive, motor control, and power conversion applications.This MOSFET transistor has an integrated over-temperature shutdown feature that protects the device from thermal overload and inaccurate temperature measurements, providing improved safety and reliability when in operation. It also has soft-start properties and anti-skipping protection circuit to prevent many forms of interference.The IPB65R190CFDAATMA1 works on the principle of electrostatic field-effect (EEE). This is a method of controlling conduction through the semiconductor channel using the electric field produced by an applied voltage. When no voltage is applied, the FET is turned off and the channel is pinched off. When a positive voltage is applied and a positive voltage given to the gate, an excess of electron majority carriers are built up in the channel allowing the flow of current. Conversely, a negative voltage applied to the gate decreases the concentration of electron majority carriers and reduces the current flow.The IPB65R190CFDAATMA1 has basic characteristics that span a diverse range of electrical parameters. The breakdown voltage of the device is 65V, the gate threshold voltage is 1.9V, and the drain-source on-resistance is 0.18 Ohms with a drain current of 4.3A. It also has a high power dissipation capability, with a thermal resistance-junction to ambient of 16 °C / W. This transistor is an ideal choice for high voltage applications, as its pinched off channel is efficient at dissipating heat, providing high current gain at high temperatures in demanding applications. Furthermore, its wide range of dynamic resistance and current levels allows for a wide dynamic range of control signals, making it ideal for controlling motor current,and motor speed. In addition, it has high breakdown voltage, and soft-start features, making it ideal for automotive and other safety applications.In summary, the IPB65R190CFDAATMA1 is a versatile and reliable MOSFET transistor that provides excellent performance in a wide range of applications, including motor control and power conversion. With its integrated protections, it is ideal for applications that require high voltage, high current, and high power dissipation capability. The device works on the principle of electrostatic field-effect, allowing for a wide dynamic range of control signals, making it ideal for controlling motor current and motor speed.

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