Allicdata Part #: | IPB60R165CPATMA1TR-ND |
Manufacturer Part#: |
IPB60R165CPATMA1 |
Price: | $ 1.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 21A D2PAK |
More Detail: | N-Channel 600V 21A (Tc) 192W (Tc) Surface Mount PG... |
DataSheet: | IPB60R165CPATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.62542 |
Vgs(th) (Max) @ Id: | 3.5V @ 790µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IPB60R165CPATMA1 is a real workhorse when it comes to transistors, FETs and MOSFETs. It\'s a single, highly efficient electrical device that can be used in a variety of applications. It\'s also a great choice for PCB layouts and electronic circuits, thanks to its high level of integration and low power dissipation.
One of the defining features of the IPB60R165CPATMA1 is its high-efficiency level. With a maximum current rating of 60 A, it provides superior performance while still saving energy. By using the highly efficient N-channel MOSFET technology, this device is able to maintain its small size, while still providing incredible power efficiency. The large drain-source voltage and low gate threshold voltage make this device suitable for use in a variety of designs, and its low output capacitance ensures that it does not need to be changed that frequently.
In terms of application fields, the IPB60R165CPATMA1 transistor can be used in a variety of applications, such as analog and digital signal switching, class D audio amplifier circuits and power switching. Its ability to handle high currents and high-voltages make it an excellent choice for use in mobile applications, industrial control and automotive products. It can also be used in power management and wireless applications.
As for the working principle of this transistor, the IPB60R165CPATMA1 features an N-channel MOSFET structure. When the gate voltage of this transistor is higher than the threshold voltage, the MOSFET is in the on-state, allowing current flow from the drain to the source. When the gate voltage is below the threshold voltage, the transistor is in the off-state, preventing current flow. The device also features a forward-biased body diode, which can be used as a protection mode, allowing a certain amount of current flow in the event of an output short.
Overall, the IPB60R165CPATMA1 is a highly efficient device that can be used in a numerous applications, from automotive to industrial control and beyond. Its large current rating and high-voltage handling capabilities make it a great choice for many applications, regardless of size or complexity. What\'s more, its low power dissipation and integrated N-channel design make it a highly efficient choice for PCB layouts and circuits, ensuring reliable performance for the long term.
The specific data is subject to PDF, and the above content is for reference
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