IPB65R065C7ATMA1 Allicdata Electronics
Allicdata Part #:

IPB65R065C7ATMA1-ND

Manufacturer Part#:

IPB65R065C7ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO263-3
More Detail: N-Channel 600V 7.3A (Tc) 171W (Tc) Surface Mount D...
DataSheet: IPB65R065C7ATMA1 datasheetIPB65R065C7ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 171W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPB65R065C7ATMA1 is a popular single, fast depleting (superjunction) Power MOSFET from Infineon\'s CoolMOSTM technology.

A Power MOSFET (commonly known as a metal-oxide-semiconductor field-effect transistor or MOSFET) is a type of power transistor that utilizes the MOSFET semiconductor construction. It is used in a variety of electronics applications and comes in many different power ratings, drain-source breakdown voltage ranges, gate-source voltage ranges, and packages.

The IPB65R065C7ATMA1 MOSFET is designed specifically to meet the needs of power-management applications such as computing, automotive, telecommunications, consumer electronics and other power-electronic applications. It features low On-resistance, low gate charge and low gate-to-source voltage for lower power. It is capable of withstanding peak transient voltages up to 30 volts and is rated for operation up to 175°C.

The IPB65R065C7ATMA1 MOSFET offers a number of advantages over other types of transistors and power switches, such as low gate charge, low on-state resistance, low capacitance and high current capability. It also has a package size that is much smaller than other power MOSFETs, making it suitable for space-constrained applications. The MOSFET\'s fast depletion characteristics make it particularly well-suited for power management tasks in higher voltage applications such as those found in appliances, automotive, LED drivers, and consumer products.

The IPB65R065C7ATMA1 MOSFET is a fast-depleting MOSFET, meaning that it utilizes a wide bandgap power semiconductor material to maximize the depletion effect, minimize gate charge, and maximize voltage blocking performance for on-off switching. Its fast-depleting characteristics make it suitable for high side switching applications and for use in a wide range of voltage applications up to 650 volts. Compared to slower depletion MOSFETs, the IPB65R065C7ATMA1 MOSFET offers higher dielectric strength and improved long-term reliability. The MOSFET also has a high current carrying capacity, making it well-suited for high-power applications.

In summary, the IPB65R065C7ATMA1 is an excellent choice for power management tasks in higher voltage applications such as those found in appliances, automotive, LED drivers, and consumer products. It offers high-performance, low on-state resistance, low gate charge, and fast depletion characteristics. It can withstand peak transient voltages up to 30 volts and is rated for operation up to 175°C.

The specific data is subject to PDF, and the above content is for reference

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