IPB60R600CPATMA1

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The IPB60R600CPATMA1 transistor is a single-source insulated gate field-effect transistor (IGFET) in a through-hole package. It is manufactured by Infineon Technologies. It is an ideal component for power switching, as it offers excellent switching characteristics, maximum drain-source breakdown voltage, and low on-state resistance. The IPB60R600CPATMA1 uses a vertical PowerTrench MOSFET technology, which offers its benefits in many fields. It is suitable for digital and analog switching operations, as well as for various power applications.

The IPB60R600CPATMA1 has a maximum drain-source breakdown voltage of 600V, with a maximum on-state resistance of 0.0065 ohms. This transistor is designed to be used in power circuits with drain currents ranging from 124A to 256mA. The maximum gate-source voltage for the transistor is ±20V. This makes it suitable for digital and analog switching applications, where it can handle peak currents up to 35A. The maximum junction temperature for the IPB60R600CPATMA1 is 175°C.

The IPB60R600CPATMA1 utilizes the PowerTrench design to minimize losses while maximizing the efficiency of the circuit. It has a low gate-charge value and a high switching speed to reduce switching time and losses. The advanced packaging design of the transistor allows it to be used in cramped spaces and eliminates the need for bulky heatsinks or fan cooling. The strong field-effect mobility of the IPB60R600CPATMA1 ensures maximum electrically-controlled switching. The transistor also has an enhanced avalanche energy-to-capacitance ratio, which ensures minimal power dissipation.

The IPB60R600CPATMA1 has an operating temperature range of -55°C to 175°C. It is also certified to meet the frequencies and emissions requirements of the UL61100 electrical safety standard. This makes it suitable for applications where safety is a concern. The transistor has a total gate-source capacitance of 595pF, with a typical turn-on delay of 8ns and turn-off delay of 4 ns. It is available in a Through-Hole-2 (TO-220M3) package.

The IPB60R600CPATMA1 has a wide range of potential applications. It can be used in motor controllers and AC/DC power switching applications. It can also be used in applications such as solar cells, unattended supply systems, air conditioners, refrigerators, televisions, and other industrial applications. Additionally, the transistor is also suitable for use in automotive applications, such as in electronic fuel injection and throttle control.

In summary, the IPB60R600CPATMA1 is a single-source insulated gate field-effect transistor (IGFET) designed for power switching applications. It offers excellent switching characteristics, maximum drain-source breakdown voltage, and low on-state resistance. The advanced PowerTrench design of the transistor provides enhanced mobility, reduced losses, and improved efficiency. With its wide range of potential applications and electrical safety certifications, the IPB60R600CPATMA1 is an ideal choice for various power switching needs.

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