IPB60R080P7ATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 590µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	129W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2180pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	80 mOhm @ 11.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	37A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPB60R080P7ATMA1 is the part name of a field-effect transistor (FET) manufactured by Infineon Technologies. In the electronics industry, FETs play a crucial role in providing a reliable switched current path from one area of a circuit to another. This particular FET model is a single N-channel type, meaning that its drain current is conducted through a single conducting channel. Thus, this device is best suited for applications requiring a controllable on/off switch in the circuit path. The main purpose of this FET is to efficiently and reliably switch currents/voltages in electronic circuits.In electronic circuits, transistors are widely used in applications such as controlling current flow in integrated circuit designs, amplifying signals, and switching power or voltage. They play an important role in regulating an electric current by passing it from one component to another. FETs are similarly designed to regulate current flow, but in a different manner. FETs achieve this by controlling the electric field that is passing through the device. By controlling this electric field, FETs can control the transfer of electricity from one part of a circuit to another.The FET type in question (IPB60R080P7ATMA1) functions on the principle of field-effect transistor operation. Unlike the bipolar junction transistor, which relies on base current to control current flow through the device, the FET relies on the voltage applied to the gate terminal. When a voltage is applied to the gate terminal, it creates an electric field in the channel or area between the drain and the source. This electric field then acts on the channel, making it easier to drive electrons through the channel when a voltage is applied to the drain. The result is that current begins to flow through the channel and is controlled by the voltage applied to the gate terminal.The IPB60R080P7ATMA1 is a n-channel FET, meaning it is most suitable when controlling current flow in circuits that require a difference between the source and drain potential. This is due to the fact that an n-channel FET utilizes a positive gate voltage for conduction and a negative gate voltage for cutting off current flow. In addition to its polarization, this type of FET is also designed with an extremely low threshold voltage, allowing the unit to easily switch between on and off states, even with extremely low gate voltages.The IPB60R080P7ATMA1 transistor has a wide range of applications, most notably in the industrial and automotive fields. It is commonly used as a switch for various power applications, such as switching on/off motors, actuators, relays, and solenoids, as well as power supplies and inverters. In the automotive sector, this type of FET is used in electronic fuel injectors, safety systems, and electronic throttle controls, as well as a variety of other industrial and automotive applications. When used in switching applications, the IPB60R080P7ATMA1 transistor requires a specialized gate driver to ensure smooth and efficient operation. When undergoing switching operations, these transistors require a specific set of conditions to ensure proper operation. Therefore, an appropriate gate driver must be used to accurately provide the necessary conditions for switching, as well as protect the device’s gate terminal and prevent excessive drain-source currents and damage to the device.In addition to the above-mentioned applications, the IPB60R080P7ATMA1 transistor is also used in the fields of computer power, communication, and audio. It is commonly used in switching applications such as amplifiers and power regulators, and can also be used as a power MOSFET, providing extremely low RDS(on) values in comparison to other types of transistors.In conclusion, the IPB60R080P7ATMA1 is a single N-channel type FET designed for use in a wide range of applications including industrial and automotive applications, as well as computer power and audio equipment. It is highly reliable, efficient, and cost-effective, making it a widely used and widely-preferred transistor option. It is also easy to use and requires minimal external components, meaning it is a great fit for applications where the conditions and/or components are limited.

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