Allicdata Part #: | IPB60R060P7ATMA1TR-ND |
Manufacturer Part#: |
IPB60R060P7ATMA1 |
Price: | $ 2.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH TO263-3 |
More Detail: | N-Channel 650V 48A (Tc) 164W (Tc) Surface Mount D²... |
DataSheet: | IPB60R060P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.44599 |
Vgs(th) (Max) @ Id: | 4V @ 800µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 164W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2895pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 15.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPB60R060P7ATMA1 is a N-channel MOSFET (metal-oxide-semiconductor field effect transistor) chip with an operating power range of 6 Amps and 600V. It is a single FET with a low-current drive that is used in a variety of applications, from low-voltage switching to high-powered switching. This device is commonly used to provide electrical isolation, control high current, and offer protection from overvoltage and short-circuits.
The primary application field of IPB60R060P7ATMA1 is in low-voltage switching applications such as control circuits and devices. When an application requires a low-level logic control signal to handle a high current load, IPB60R060P7ATMA1 devices can be used. In these applications, the device serves two purposes: (1) isolating the control signal from the load, and (2) providing a low-current drive to operate the load.
Working Principle of IPB60R060P7ATMA1
The working principle of IPB60R060P7ATMA1 is fairly straightforward. First, the device features a low-current “gate” (or control) signal which can be enabled or disabled. When the gate is enabled, current flows from the source to the drain, thereby activating the load. When disabled, no current flows and the load is turned off.
The most important feature of this device is its low-current drive. This means that it will require significantly less current to switch the device than most other transistors. Low-current drive transistors are essential for controlling high-current devices, as they can ensure safe and precise control with minimal power consumption.
In addition, the IPB60R060P7ATMA1 has a variety of protection features, such as over-voltage and short-circuit protection. This helps to ensure that the device will be able to withstand any surge in current or voltage that may occur.
Overall, the IPB60R060P7ATMA1 is an excellent choice for low-voltage switching applications due to its low-current drive, protection features, and reliability. It is the perfect device for applications that require precise and reliable control of high current loads.
The specific data is subject to PDF, and the above content is for reference
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IPB65R190C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R065C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R095C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R125C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
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IPB65R045C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
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IPB60R160C6ATMA1 | Infineon Tec... | 1.41 $ | 1000 | MOSFET N-CH 600V 23.8A TO... |
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