IPB65R380C6ATMA1

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The IPB65R380C6ATMA1 is a single, insulated-gate field-effect transistor (IGFET), also known as a power MOSFET or MOSFET. It is based on a silicon chip technology that provides better control and higher accuracy in power control and processing. This is important in systems such as automotive, industrial, and medical that are highly dependent on power control and timing management.

An IGFET is a type of field-effect transistor (FET) in which the flow of current is controlled by an electric field created by a voltage applied across an inversion layer on the channel of the transistor. This voltage is referred to as the “gate bias voltage” or “gate drive.” When the gate bias voltage is applied, free electrons in the inversion layer are attracted to the gate electrode, creating an electric field that modulates the current flowing through the channel.

The IPB65R380C6ATMA1 IGFET is designed for applications that require high heat dissipation and low drain-source on resistance in order to provide improved efficiency and power density. The device features an optimized power-loss gradient and a low gate-source capacitance. This translates into better system performance at higher currents than traditional FETs can provide.

The IPB65R380C6ATMA1 features a N-channel MOSFET with a breakdown voltage of 380 volts and an on-resistance of up to 65 mOhms. The device is capable of switching high voltage and large currents while also providing excellent power handling and low losses. This combination makes it ideal for high-power, high-frequency applications such as motor control, voltage regulation and switching power supplies.

The working principle of the IPB65R380C6ATMA1 is the same as for any FET; a voltage applied to the gate electrode is used to control the current flow within the channel. The difference is that the voltage required to control the channel is much lower for an IGFET, making it more accurate and efficient than traditional FETs. The MOSFET also benefits from increased heat dissipation, meaning it can handle much higher currents with less power loss.

The IPB65R380C6ATMA1 can be used in a wide range of power control and processing applications, including motor control, voltage regulation, switching power supplies, frequency converters and lighting controllers. The device offers excellent performance, accuracy and efficiency, making it suitable for the most demanding of power control applications.

The combination of low voltage control, low on-resistance and high efficiency makes the IPB65R380C6ATMA1 a solid choice for applications that require accurate, power dense, and reliable power control and processing. The device can be used in a variety of industrial, automotive, and medical applications to improve system performance and reliability while also reducing power losses.

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