IPB60R160C6ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 750µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	176W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1660pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	75nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	160 mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23.8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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IPB60R160C6ATMA1 is a single field-effect transistor (FET) that is associated with power devices which are used in automated electrical or machine engineering systems. It is a kind of switch that is used to control the flows of electricity at a certain level depending on the voltage or current across the circuit. The IPB60R160C6ATMA1 transistor is responsible for opening and closing a switch in an electrical circuit, helping other devices and components in the system to operate as they are supposed to.

The IPB60R160C6ATMA1 is mainly classified as a metal-oxide-semiconductor field-effect transistor (MOSFET). It has three different terminals; gate, drain, and the source. The gate is the point of concurrency between the device and voltage or current, where input and output signals pass through. The output is taken from the drain terminal and the input is taken from the source terminal. A MOSFET usually operates based on the principle of switching and voltage level.

The IPB60R160C6ATMA1 is mainly used in applications that require a high-power operating frequency such as motor control applications, induction heating, computer graphics, and high-speed digital communications. It is also used in battery optimization and power management systems, where its low gate threshold voltage is beneficial in optimizing the power consumption of the system. Moreover, it is also used in various other applications such as voltage regulators, radio-frequency power amplifying components, and switching power supplies.

The working mechanism of the IPB60R160C6ATMA1 transistor relies on the depletion layer that is formed between the gate and the drain terminals when a voltage or current is applied. When the depletion layer crosses a certain threshold, the device then works as a switch and the transistor is then said to be in the ‘on’ state. The flow of current from the drain to the source is then said to be in saturation. Similarly, when the depletion layer is decreased below the threshold, the transistor is said to be in the ‘off’ state, and the current from the drain to the source is reduced to a minimum.

The IPB60R160C6ATMA1 is also capable of withstanding up to a-very-high voltage surges and can handle up to 60 volts of DC current. The device exhibits a very-high on-state current gain and a very-high input impedance, making it ideal for high-power applications that require low on-resistance. The device is also available in both through-hole and surface mount devices, making it very easy to be incorporated into existing systems.

The IPB60R160C6ATMA1 provides a large variety of advantages to its users. It has a very-high maximum voltage rating and current carrying capability, making it ideal for applications such as automated machinery. It also has a low gate threshold voltage that helps increase the power efficiency of systems. Furthermore, its state-of-the-art packaging enables its users to make use of the latest advances in semiconductor technology.

In conclusion, the IPB60R160C6ATMA1 is a single MOSFET (metal-oxide-semiconductor field-effect transistor) that is associated with power devices made for automated electrical or machine engineering applications. The device works on the principle of an applied voltage or current to form a depletion layer between gate and drain terminals, enabling a high-power operating frequency and low gate threshold voltage. The device is available in both through-hole and surface mount devices, it has a very-high maximum voltage rating and current carrying capability, and it has a low gate threshold voltage that helps increase the power efficiency of systems.

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