IPB60R160P6ATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R160P6ATMA1-ND

Manufacturer Part#:

IPB60R160P6ATMA1

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO263-3
More Detail: N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount ...
DataSheet: IPB60R160P6ATMA1 datasheetIPB60R160P6ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.16614
Stock 1000Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IPB60R160P6ATMA1 is a P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a gate-to-drain voltage of +/-20V and drain-to-source voltage of up to 160V. It is used in various applications that require both high power switching and good performance.

A MOSFET is an electrical device which allows current to be transferred between two points, at a potential difference, through a gate which is electronically controlled. The MOSFET is a semiconductor device with three terminals and uses an electric signal to regulate the current flowing through it. The three terminals are the gate, the drain, and the source. The voltage applied to the gate controls the drain-to-source current. MOSFETs have the advantage of being extremely efficient, as they require less energy than other switching technologies.

The IPB60R160P6ATMA1 has a maximum on-state drain current of 160A, and a maximum drain-source voltage of 160V. It also has an on-resistance of less than 10mΩ. The device features low input capacitance and low turn-on switching times. These features make the IPB60R160P6ATMA1 an ideal device for power switching applications such as motor drives, power supplies, and switching regulators.

The IPB60R160P6ATMA1 works on the principle of controlling the output current by varying the amount of voltage applied to the gate. When a voltage is applied to the gate, a small current flows through the device, causing the drain-source voltage and the gate-source voltage to increase. This increase in voltage compresses the drain-source and gate-source currents, allowing the output current to be regulated.

In addition to its use in power switching applications, the IPB60R160P6ATMA1 can also be used to provide level shifting, generate signals, act as a current regulator, and provide input protection for sensitive circuits. The device is also suitable for a wide variety of other applications such as automotive, industrial, and consumer electronics.

The IPB60R160P6ATMA1 is a versatile and powerful device, which makes it an excellent choice for a wide range of applications. Its low on-resistance, high current handling capability, and excellent thermal properties make it a great choice for any application requiring high power switching and excellent performance.

The specific data is subject to PDF, and the above content is for reference

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