IPB60R190P6ATMA1 Allicdata Electronics

IPB60R190P6ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPB60R190P6ATMA1TR-ND

Manufacturer Part#:

IPB60R190P6ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO263-3
More Detail: N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount ...
DataSheet: IPB60R190P6ATMA1 datasheetIPB60R190P6ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 151W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IPB60R190P6ATMA1 is a MosFET type of transistor which is tailored for high current applications, as well as high speed switching. The device has an extremely low on-resistance, and is suitable for high-current switching applications such as power converters, power distributions, DC-DC converters, and more.

Application Field

IPB60R190P6ATMA1 is mainly used in high power applications. It is widely used in power supplies, DC/DC converters, and in multiple applications which require a high current and fast power switching. The device also has excellent diode reverse-recovery characteristics and improved gate and avalanche behaviors.

Specially designed for laptop and notebook computers, the IPB60R190P6ATMA1 can be used as a high-speed power switch. It offers high voltage performance, low on-resistance, and a shallow depth profile. This makes the device suitable for space-restricted applications. As a high power device, it is capable of operating up to 80A peak current and has a operating frequency range of up to 1.2MHz.

Working Principle

IPB60R190P6ATMA1 is a depletion mode type of MosFET which utilizes a metal-oxide semiconductor fabrication process. In this, the gate voltage is used to control the conductivity of the channel between the source and the drain of the device. The device is a low-on-resistance type and offers high efficiency and low power loss.

When the gate voltage is high, the current will pass through the channel and the MosFET will be in the conductive state. When the gate voltage is low, the current is blocked by the depletion layer and the MosFET will be in the non-conductive state. This provides the desired high speed power switching.

The IPB60R190P6ATMA1 also features a high-voltage tolerance and is available in various package options, including an ESM surface-mount package. The device is also able to withstand high temperatures, making it suitable for use in high-temperature applications.

Conclusion

IPB60R190P6ATMA1 is a MosFET type of transistor which is tailored for high current applications, as well as high speed switching. With a low on-resistance and excellent features, this device is ideally suited for use in power supplies, DC/DC converters and in multiple applications which require a high current and fast power switching. This makes the IPB60R190P6ATMA1 an ideal choice for laptop and notebook computers.

The specific data is subject to PDF, and the above content is for reference

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