IPB60R099CPAATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R099CPAATMA1TR-ND

Manufacturer Part#:

IPB60R099CPAATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 31A TO263-3
More Detail: N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG...
DataSheet: IPB60R099CPAATMA1 datasheetIPB60R099CPAATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IPB60R099CPAATMA1 is a semiconductor device belonging to the field of transistors and FETs (Field-Effect Transistors). It is a MOSFET (Metal Oxide Silicon Field Effect Transistor) and more specifically, it is a single type device. Its main application field is power solutions, as it is able to operate at higher power levels.

Application field

The IPB60R099CPAATMA1 is suitable for use in power solutions where higher power levels are required. The device can be used as an electronic switch to control the flow of current and to generate a specified output voltage. It can also be used as a voltage regulator, for applications such as DC-DC converters, voltage converters and HVACs.

The IPB60R099CPAATMA1 is mainly used in automotive applications due to its relatively high power capabilities. It can also be used in industrial and domestic applications, as it has lower power levels than other devices, making it suitable for applications that require a lower power budget.

Working principle

The IPB60R099CPAATMA1 is a MOSFET device, which works based on the principles of electrostatic attraction and repulsion. It consists of two MOSFETs in series, a control gate and a drain. The control gate, also known as the gate, is the part of the device which is used to “switch on” and “switch off” the operation of the device. It works by inducing a current flow in the drain, using the principles of electrostatic attraction and repulsion.

When the gate voltage is negative, a positive bias is induced on the drain, which induces a current flow in the drain. When the gate voltage is positive, a negative bias is induced on the drain, which shuts off the current in the drain. By varying the gate voltage, the device can be switched on and off as required.

The IPB60R099CPAATMA1 has a drain current of 9 A, which makes it suitable for use in applications requiring higher current demands. Its maximal voltage rating is 60V, making it suitable for use in low voltage applications.

Conclusion

The IPB60R099CPAATMA1 is a MOSFET device, which is mainly used in automotive and industrial applications for power solutions. It works by using the principles of electrostatic attraction and repulsion to induce current flow in the drain. Its maximal current rating is 9 A and its maximal voltage rating is 60V, making it suitable for use in the applications for which it is intended.

The specific data is subject to PDF, and the above content is for reference

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