IPB60R125C6ATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R125C6ATMA1TR-ND

Manufacturer Part#:

IPB60R125C6ATMA1

Price: $ 2.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 30A TO263
More Detail: N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount D²...
DataSheet: IPB60R125C6ATMA1 datasheetIPB60R125C6ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.86418
Stock 1000Can Ship Immediately
$ 2.05
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 219W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IPB60R125C6ATMA1 is a high-voltage insulated gate bipolar transistor (IGBT). It is designed for power switching applications in power management, motor control, and industrial automation applications. The device features a short-circuit ruggedness, low losses, and excellent thermal stability.

An IGBT is a type of bipolar transistor, which further explains the components of the IGBT. An IGBT is made up of two components – a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). As such, they are sometimes referred to as a hybrid device. They combine the relatively high-current handling capability of a BJT with the high input resistance of a MOSFET. The IGBT also exhibits fast switching speeds and low on-state voltage drop, providing higher efficiency and better energy savings over other types of transistors.

The IPB60R125C6ATMA1 is designed for use in industrial automation and power management applications that require a high-voltage switch. It features a maximum voltage rating of 600V and a maximum current rating of 125A. The device is capable of operating at high frequencies, up to 20kHz.

The IPB60R125C6ATMA1 is designed to handle high power loads with minimal loss. It features a low voltage drop when in the on-state, and a fast switching speed of up to 20kHz. The device also offers excellent thermal stability, allowing it to handle high power loads without overheating.

The IGBT switch is controlled by the gate voltage. When the gate voltage is low, the device is off and no current flows through the device. When the gate voltage is increased, current flows through the device, and the device is on. The gate voltage controls the current flow through the device, as well as the speed of switching. By adding a pulse or a continuous voltage to the gate voltage, the device can be switched on and off quickly and efficiently.

The IPB60R125C6ATMA1 is a versatile IGBT switch that can be used in many applications. It can be used in motor controllers, power management and industrial automation circuits. In motor control applications, it can be used to control the speed of motors and reduce their energy consumption. In power management circuits, it can be used as a voltage regulator to provide a constant voltage supply. In industrial automation, it can be used for fast switching and controlling of a variety of electrical and electronic equipment.

In summary, theIPB60R125C6ATMA1 is a high-voltage insulated gate bipolar transistor (IGBT) designed for power switching applications in power management, motor control, and industrial automation applications. It features a short-circuit ruggedness, low losses, and excellent thermal stability. It can be used in motor controllers, power management and industrial automation circuits. It can also be used for fast switching and controlling of a variety of electrical and electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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