Allicdata Part #: | IPB60R040C7ATMA1TR-ND |
Manufacturer Part#: |
IPB60R040C7ATMA1 |
Price: | $ 32.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 50A TO263-3N-Channel 650V 50A (Tc... |
More Detail: | N/A |
DataSheet: | IPB60R040C7ATMA1 Datasheet/PDF |
Quantity: | 1933 |
1 +: | $ 32.83000 |
Series: | CoolMOS™ C7 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 24.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1.24mA |
Power - Max: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 400V |
FET Feature: | -- |
Power Dissipation (Max): | 227W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3 |
Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Base Part Number: | -- |
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IPB60R040C7ATMA1 belongs to the family of Single n-channel power MOSFETs. It utilizes the new advanced strip process and the new advanced Trench technology with field-stop to provide a higher rating of pulsed power. It features low FOM (Fast On-Time), low gate charge, low leakage current and low on-resistance. This makes the IPB60R040C7ATMA1 perfect for use in a number of low-voltage applications.
Application Field
The IPB60R040C7ATMA1 is suitable for applications such as switch mode power supplies, rectification and isolation, defrosting and thermostatic controls, power supply circuits, and motor drive controllers. It can be used to control the switching of devices like lighting, appliance controls, power converters and motor drives.A key feature of the IPB60R040C7ATMA1 is its low on-resistance values. This makes it possible to have higher pulsed power ratings while still maintaining a low power dissipation. This makes it ideal for applications where long on-time and high power is needed. It is also suitable for high side applications in automotive systems due to its superior thermal characteristics.
Working Principle
The IPB60R040C7ATMA1 is an n-channel MOSFET. The MOSFET works by using the principle of conductivity modulation. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the n-channel in the MOSFET to the p-channel side. This reduces the amount of resistance in the MOSFET, allowing current to flow through it.The IPB60R040C7ATMA1 also features a low gate charge, which allows for faster switching of the device. This reduces power dissipation and increases efficiency. Additionally, the device has a low on-resistance and low leakage current, meaning it can be used in applications requiring long on-times with low power.
Conclusion
The IPB60R040C7ATMA1 is an ideal device for applications requiring a high rating of pulsed power, and low on-resistance and low leakage current. It is suitable for a wide range of applications, such as switch mode power supplies, rectification and isolation, defrosting and thermostatic controls, power supply circuits, and motor drive controllers. It utilizes the principle of conductivity modulation to control the switching of devices and has a low gate charge for fast switching and increased efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPB60R180C7ATMA1 | Infineon Tec... | 1.12 $ | 1000 | MOSFET N-CH 650V 13A TO26... |
IPB60R120C7ATMA1 | Infineon Tec... | 1.74 $ | 1000 | MOSFET N-CH 650V 19A TO26... |
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IPB60R060C7ATMA1 | Infineon Tec... | 3.31 $ | 1000 | MOSFET N-CH 650V 35A TO26... |
IPB60R040C7ATMA1 | Infineon Tec... | 32.83 $ | 1933 | MOSFET N-CH 650V 50A TO26... |
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IPB60R600CPATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.1A TO2... |
IPB65R190C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R065C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R095C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R125C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
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IPB65R150CFDATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 22.4A TO... |
IPB60R165CPATMA1 | Infineon Tec... | 1.79 $ | 1000 | MOSFET N-CH 600V 21A D2PA... |
IPB65R045C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
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IPB60R060P7ATMA1 | Infineon Tec... | 2.69 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
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IPB60R190C6ATMA1 | Infineon Tec... | 1.18 $ | 1000 | MOSFET N-CH 600V 20.2A TO... |
IPB65R110CFDATMA1 | Infineon Tec... | 2.4 $ | 1000 | MOSFET N-CH 650V 31.2A TO... |
IPB60R120P7ATMA1 | Infineon Tec... | 1.46 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB60R160C6ATMA1 | Infineon Tec... | 1.41 $ | 1000 | MOSFET N-CH 600V 23.8A TO... |
IPB60R125CPATMA1 | Infineon Tec... | 2.45 $ | 1000 | MOSFET N-CH 600V 25A TO26... |
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