IPB60R280P7ATMA1

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IPB60R280P7ATMA1 is a high-voltage, high-current and low-on-resistance field-effect transistor (FET). It belongs to a single type of MOSFET. This FET also has ultra-low gate charge and fast switching response time, which make it suitable for a wide range of applications.

The IPB60R280P7ATMA1 FET device is for use in applications where high-voltage, high-current and low-on resistance are required. Its low-on resistance characteristics allow for low-loss power dissipation, making it suitable for applications such as DC-DC conversion and motor control.

IPB60R280P7ATMA1 is capable of providing high-voltage, high-current and low-on resistance with its maximum drain-source voltage of +-280V, maximum continuous drain current of 18 Amps, and on-resistance of 4.75 milli-Ohms. The maximum junction temperature of the FET is up to 150-degrees Celsius, allowing it to operate in harsh environmental conditions.

The IPB60R280P7ATMA1 FET device also has fast switching speed. Its switching speed is just 2.5 nanoseconds, allowing it to quickly and accurately turn off and on power supply. This helps reduce energy loss, improving overall efficiency and responsiveness.

The FET device also has an ultra-low gate charge. Its gate charge, Qg, is just 120 nC, which helps enable higher FET performance for faster switching response time.

The IPB60R280P7ATMA1 FET device has a wide range of applications. It is particularly good for applications such as computer power supplies, motor control, and DC-DC converters. It can also be used in power adaptors, backlighting circuits, and power management in portable devices such as tablets and laptops.

The working principle behind the IPB60R280P7ATMA1 FET device is simple yet efficient. The device works in a manner similar to a field-effect transistor. The gate of the device is shorted with the source and operates like an insulated-gate.

When the gate voltage is applied, it allows current to flow between the drain and the source, which is then regulated by the applied gate voltage. This process is known as voltage modulation, which is what allows for the device\'s high-voltage, high-current and low-on-resistance characteristics.

In conclusion, the IPB60R280P7ATMA1 is a single type MOSFET which is ideal for applications requiring high-voltage, high-current and low-on resistance. Its low-on resistance and ultra-low gate charge characteristics help to reduce energy losses and improve switching response time. In addition, its wide range of applications makes it suitable for a variety of applications such as motor control and DC-DC converters.

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