IPB65R150CFDATMA1

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The IPB65R150CFDATMA1 is a 650V N-Channel MOSFET produced with the advanced production technology of Alpha & Omega Semiconductor Ltd. This device is designed with the advanced trench MOSFET technology, providing extremely low on-state resistance and high current capacity. It is suitable for high-frequency switching and conversion applications.

Application

The IPB65R150CFDATMA1 is designed for use in a variety of applications. It is ideal for high-efficiency, low standby power consumption systems. It can be used in high current and high frequency switching applications, such as DC-DC converters, motor drivers, and solar inverters. It can also be used in LED lighting solutions, deflection regulators, and low-side switch applications.

Working Principle

The IPB65R150CFDATMA1 is an n-channel MOSFET with an advanced trench MOSFET technology. This device is built with an extremely low on-state resistance and high current capacity. It works by utilizing electrons for its operation. When a voltage is applied across the source and gate terminals, the gate-source voltage causes an electric field to form between the gate and the channel. This electric field then attracts electrons from the source terminal to the gate. This causes the channel to be filled with drained electrons, allowing the current to flow between the source and drain terminals. This current flow is then controlled by the gate voltage.

The device also contains a special ultra-low parasitic BVt structure, which helps to reduce EMI/RFI noise and minimize switching losses. Additionally, the MOSFETs are able to dissipate a lot of heat without becoming damaged, making it ideal for high-frequency switching applications.

Conclusion

The IPB65R150CFDATMA1 is a 650V n-channel MOSFET device with advanced trench MOSFET technology. This device is designed for use in a variety of high-frequency switching and conversion applications due to its extremely low on-state resistance and high current capacity. Its BVt structure helps to reduce EMI/RFI noise and minimize switching losses while its thermal dissipation capabilities make it ideal for high-frequency switching applications.

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