IPB60R330P6ATMA1

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An IPF60R330P6ATMA1 is a single P-channel enhancement-mode Field-Effect Transistor (FET). It is designed to operate as a majority carrier device and has superior temperature stability as compared to other materials such as silicon and aluminum-gallium nitride. It is also suitable for applications that require high frequency performance and high-power density, as well as applications in automotive markets

The IPF60R330P6ATMA1 is available in a variety of packages, including SOT-23, "C" Can, DPAK, D2PAK, IP-7, SMB, SC-59, and TO-220. It has a Vds of 30V and a maximum continuous drain current of 6A. Its maximum power dissipation is 2.7W and its on-resistance is 3Ω. Its operating temperature range is -55°C to +150°C.

Application fields

The IPF60R330P6ATMA1 is suitable for a range of applications. It can be used in DC/DC converters, power MOSFETs, DC/AC inverters, and Synchronous rectification. It can also be used in lighting applications, such as LED lighting and switching power supplies. Additionally, it can be used in applications such as motor control, computer peripherals, wireless communication, power amplifiers, and automotive applications.

Working principle

The IPF60R330P6ATMA1 is a P-channel enhancement-mode FET. It works by using a voltage applied to the gate to control the current flow between the drain and the source. The gate is electrically isolated from the other two terminals and does not carry current. When the gate is at 0V, the n-channel region of the MOSFET is reverse biased and the drain is disconnected from the source. A positive gate voltage increases the width of the conducting channel and the current will flow. The gate voltage is then said to be "turned on".

When a positive voltage is applied to the gate, electrons in the n-channel region are attracted to the attractive region of the gate, which allows current to flow between the drain and the source. Thus, the IPF60R330P6ATMA1 can be used to control the current flow of a circuit by applying a positive voltage to the gate.

The IPF60R330P6ATMA1 also has superior temperature stability compared to other MOSFETs. This means that the voltage-current response of the MOSFET does not significantly vary with temperature, making it more suitable for use in applications which require high frequency performance and high-power density.

Conclusion

The IPF60R330P6ATMA1 is a single P-channel enhancement-mode Field-Effect Transistor (FET). It is available in a variety of packages and has a Vds of 30V and a maximum continuous drain current of 6A. Its maximum power dissipation is 2.7W and its on-resistance is 3Ω. Its operating temperature range is -55°C to +150°C. It is suitable for applications such as DC/DC converters, power MOSFETs, DC/AC inverters, and Synchronous rectification. It also has superior temperature stability compared to other MOSFETs, making it more suitable for use in applications which require high frequency performance and high-power density.

In summary, the IPF60R330P6ATMA1 is an excellent choice for a wide range of applications where high performance and reliability are required. It is an ideal choice for a variety of applications, including motor control, computer peripherals, wireless communication, power amplifiers, and automotive applications.

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