IPD035N06L3GATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD035N06L3GATMA1 is a type of semiconductor device that can be used in many applications in the field of electronics. This particular FET is meant to be used as a Power MOSFET, which is a type of transistor designed to handle high current and power capacity with low input voltage.

Power MOSFETs are usually used in electrical systems to drive large loads like motors and LEDs. The technology was developed in the 1970s as an alternative to using traditional bipolar transistors. By using a single layer of insulation, which acts as the gate, Power MOSFETs can deliver high current in a smaller and more efficient package than its predecessors.

This particular Power MOSFET, the IPD035N06L3GATMA1, has a drain-source voltage rating of 30V and a drain current rating of 35A. It is also capable of handling up to 175W of power. This Power MOSFET is capable of switching currents at high frequencies, making it ideal for applications requiring high speeds.

The working principle of the Power MOSFET is based on the principle of transistor action. It relies on a layer of insulation on the gate, which acts as a control element that can turn the current in the device on and off. This is achieved by applying a voltage to the gate, which then allows a varying electric current to flow through the device based on its resistance. This property can be used in many different applications to achieve different levels of control over the electric current.

The IPD035N06L3GATMA1 is commonly used in motor control circuits as well as audio amplifiers. It is also often used in power supply circuits, battery chargers, LED drivers, and more. Additionally, because of its high power handling capability and its ability to switch current at high frequencies, it is also used in a variety of digital electronics applications.

The IPD035N06L3GATMA1 is a great choice for a wide variety of applications that require reliable power handling and excellent performance. It is a single N-Channel FET, which makes it well-suited for applications requiring high current capacity and low input voltage.

The specific data is subject to PDF, and the above content is for reference