IPD053N08N3GBTMA1 Allicdata Electronics
Allicdata Part #:

IPD053N08N3GBTMA1TR-ND

Manufacturer Part#:

IPD053N08N3GBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 90A TO252-3
More Detail: N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-...
DataSheet: IPD053N08N3GBTMA1 datasheetIPD053N08N3GBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IPD053N08N3GBTMA1 Application Field and Working Principle

The IPD053N08N3GBTMA1 is a type of Field Effect Transistor (FET) also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single MOSFET device with a drain-source breakdown voltage of 30V and a maximum drain current of 8A. Furthermore, it has a threshold voltage of 2.8V, an on-resistance of 0.053 Ohms and is available in the TO-252 (DPAK) and SOT-223 packages.

A MOSFET is a voltage-controlled, non-linear, three-terminal semiconductor device that is used as a switch or an amplifier in many applications. The device consists of a source, a drain and a gate which are made up of a metal, a semiconductor and an insulating layer. When a voltage is applied to the gate, it modifies the conductivity of the semiconductor, thus allowing current to be controlled with a low input voltage.

The IPD053N08N3GBTMA1 is suitable for use in a wide range of potential applications, including motor control, switching applications, DC-DC converters, and audio amplifiers. The device is ideal for high-current load-switching applications where exceptional performance is required. It is suitable for use in a large range of temperature conditions, making it suitable for use in industrial, automotive and consumer applications.

The working principle of the IPD053N08N3GBTMA1 is relatively straightforward. When a voltage is applied to the gate terminal, the semiconductor material between the source and the drain will become conductive. This then allows current to be controlled by varying the voltage on the gate terminal. As the gate voltage increases, the drain current will increase accordingly. Conversely, as the gate voltage decreases, the drain current will decrease. By manipulating the gate voltage in this manner, the device can be used to either switch on/off or amplify signals.

In conclusion, the IPD053N08N3GBTMA1 is a MOSFET device that is suitable for a wide range of applications, including motor control, switching applications, DC-DC converters, and audio amplifiers. The device is operated by manipulating the gate voltage, which in turn controls the drain current. As such, the device is ideal for high-current load-switching applications where exceptional performance is required.

The specific data is subject to PDF, and the above content is for reference

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