Allicdata Part #: | IPD053N08N3GBTMA1TR-ND |
Manufacturer Part#: |
IPD053N08N3GBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 90A TO252-3 |
More Detail: | N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-... |
DataSheet: | IPD053N08N3GBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 90µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPD053N08N3GBTMA1 Application Field and Working Principle
The IPD053N08N3GBTMA1 is a type of Field Effect Transistor (FET) also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single MOSFET device with a drain-source breakdown voltage of 30V and a maximum drain current of 8A. Furthermore, it has a threshold voltage of 2.8V, an on-resistance of 0.053 Ohms and is available in the TO-252 (DPAK) and SOT-223 packages.
A MOSFET is a voltage-controlled, non-linear, three-terminal semiconductor device that is used as a switch or an amplifier in many applications. The device consists of a source, a drain and a gate which are made up of a metal, a semiconductor and an insulating layer. When a voltage is applied to the gate, it modifies the conductivity of the semiconductor, thus allowing current to be controlled with a low input voltage.
The IPD053N08N3GBTMA1 is suitable for use in a wide range of potential applications, including motor control, switching applications, DC-DC converters, and audio amplifiers. The device is ideal for high-current load-switching applications where exceptional performance is required. It is suitable for use in a large range of temperature conditions, making it suitable for use in industrial, automotive and consumer applications.
The working principle of the IPD053N08N3GBTMA1 is relatively straightforward. When a voltage is applied to the gate terminal, the semiconductor material between the source and the drain will become conductive. This then allows current to be controlled by varying the voltage on the gate terminal. As the gate voltage increases, the drain current will increase accordingly. Conversely, as the gate voltage decreases, the drain current will decrease. By manipulating the gate voltage in this manner, the device can be used to either switch on/off or amplify signals.
In conclusion, the IPD053N08N3GBTMA1 is a MOSFET device that is suitable for a wide range of applications, including motor control, switching applications, DC-DC converters, and audio amplifiers. The device is operated by manipulating the gate voltage, which in turn controls the drain current. As such, the device is ideal for high-current load-switching applications where exceptional performance is required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPD053N08N3GBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 90A TO252... |
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IPD09N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A DPAKN... |
IPD04N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A DPAKN... |
IPD05N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A DPAKN... |
IPD06N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A DPAKN... |
IPD09N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A DPAKN... |
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