IPD036N04LGBTMA1

The IPD036N04LGBTMA1 is a device that belongs to a family of Field Effect Transistors (FETs) and MOSFETs, more specifically Single models. It has been designed by Renesas Electronics that is a provider of integrated device solutions in order to help engineers bring advanced technology systems to more efficient and reliable designs.

This type of transistor is typically used for the design of power management circuits and it allows for high-speed switching operations. The IPD036N04LGBTMA1 has an ultra-low drain-source on-resistance of 36 mOhm and a low gate-source threshold voltage of up to 1.8V. In terms of operation, it is characterized as an enhancement mode, which means that it will turn-on a current when a potential difference is applied to the gate.

Regarding its application fields, the IPD036N04LGBTMA1 can be a valid option to be used in a wide array of electronic applications such as DC-DC converters, motor drives, and relays. Its low on-state resistance makes it ideal to be used as a switch in systems where efficient power management is desired.

When it comes to the parameters that this transistor provides, its total gate charge is of 11 nC and gate-drain capacitance 12 pF. It also allows for a total gate-source charge of 6.4 nC, which is a measure of power-efficiency. It is important to note that this type of transistor requires a gate voltage higher than the source voltage in order to properly turn on the device.

In summary, the IPD036N04LGBTMA1 belongs to a family of FETs and MOSFETs, particularly Single models, which are able to cover a variety of electronic applications and high-speed switching operations. Its operation follows the typical enhancement mode design, where a voltage applied to the gate turns on the current. Its ultra-low drain-source resistance and low gate-source threshold voltage make it especially suitable for power management designs.